λ/4-shifted DFB laser/electroabsorption modulator integrated light source for multigigabit transmission

Masatoshi Suzuki; Hideaki Tanaka; Hidenori Taga; Shu Yamamoto; Yuichi Matsushima

doi:10.1109/50.108742

λ/4-shifted DFB laser/electroabsorption modulator integrated light source for multigigabit transmission

Masatoshi Suzuki^*, Hideaki Tanaka, Hidenori Taga, Shu Yamamoto, Yuichi Matsushima

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

High-speed, low-chirp, and low voltage driving characteristics of 1.55-μm λ/4-shifted distributed-feedback (DFB) laser/InGaAsP electroabsorption modulator integrated light sources are reported. By optimization of the composition and thickness of the modulator waveguide, the driving voltage for a 10-dB extinction ratio was reduced to 1.4-3V, depending on the modulator length in the range of 240-125 μm. High-speed modulation up to 10-Gb/s NRZ modulation was achieved by the integrated device with a 125-μm modulator length. The linewidth enhancement factor of the integrated modulator was estimated to be 0.15-0.48. A 2.4-Gb/s-135-km conventional fiber transmission using the integrated light source driven by less than 1V_p-p was achieved with no power penalty. Successful conventional fiber transmission over 100 km at 5 Gb/s using the integrated light source was also demonstrated.

Original language	English
Pages (from-to)	90-95
Number of pages	6
Journal	Journal of Lightwave Technology
Volume	10
Issue number	1
DOIs	https://doi.org/10.1109/50.108742
Publication status	Published - 1992 Jan
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

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10.1109/50.108742

Cite this

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title = "λ/4-shifted DFB laser/electroabsorption modulator integrated light source for multigigabit transmission",

abstract = "High-speed, low-chirp, and low voltage driving characteristics of 1.55-μm λ/4-shifted distributed-feedback (DFB) laser/InGaAsP electroabsorption modulator integrated light sources are reported. By optimization of the composition and thickness of the modulator waveguide, the driving voltage for a 10-dB extinction ratio was reduced to 1.4-3V, depending on the modulator length in the range of 240-125 μm. High-speed modulation up to 10-Gb/s NRZ modulation was achieved by the integrated device with a 125-μm modulator length. The linewidth enhancement factor of the integrated modulator was estimated to be 0.15-0.48. A 2.4-Gb/s-135-km conventional fiber transmission using the integrated light source driven by less than 1Vp-p was achieved with no power penalty. Successful conventional fiber transmission over 100 km at 5 Gb/s using the integrated light source was also demonstrated.",

author = "Masatoshi Suzuki and Hideaki Tanaka and Hidenori Taga and Shu Yamamoto and Yuichi Matsushima",

year = "1992",

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doi = "10.1109/50.108742",

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T1 - λ/4-shifted DFB laser/electroabsorption modulator integrated light source for multigigabit transmission

AU - Suzuki, Masatoshi

AU - Tanaka, Hideaki

AU - Taga, Hidenori

AU - Yamamoto, Shu

AU - Matsushima, Yuichi

PY - 1992/1

Y1 - 1992/1

N2 - High-speed, low-chirp, and low voltage driving characteristics of 1.55-μm λ/4-shifted distributed-feedback (DFB) laser/InGaAsP electroabsorption modulator integrated light sources are reported. By optimization of the composition and thickness of the modulator waveguide, the driving voltage for a 10-dB extinction ratio was reduced to 1.4-3V, depending on the modulator length in the range of 240-125 μm. High-speed modulation up to 10-Gb/s NRZ modulation was achieved by the integrated device with a 125-μm modulator length. The linewidth enhancement factor of the integrated modulator was estimated to be 0.15-0.48. A 2.4-Gb/s-135-km conventional fiber transmission using the integrated light source driven by less than 1Vp-p was achieved with no power penalty. Successful conventional fiber transmission over 100 km at 5 Gb/s using the integrated light source was also demonstrated.

AB - High-speed, low-chirp, and low voltage driving characteristics of 1.55-μm λ/4-shifted distributed-feedback (DFB) laser/InGaAsP electroabsorption modulator integrated light sources are reported. By optimization of the composition and thickness of the modulator waveguide, the driving voltage for a 10-dB extinction ratio was reduced to 1.4-3V, depending on the modulator length in the range of 240-125 μm. High-speed modulation up to 10-Gb/s NRZ modulation was achieved by the integrated device with a 125-μm modulator length. The linewidth enhancement factor of the integrated modulator was estimated to be 0.15-0.48. A 2.4-Gb/s-135-km conventional fiber transmission using the integrated light source driven by less than 1Vp-p was achieved with no power penalty. Successful conventional fiber transmission over 100 km at 5 Gb/s using the integrated light source was also demonstrated.

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λ/4-shifted DFB laser/electroabsorption modulator integrated light source for multigigabit transmission

Abstract

ASJC Scopus subject areas

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