λ/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists

K. Utaka; S. Akiba; K. Sakai; Y. Matsushima

doi:10.1049/el:19840686

λ/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists

K. Utaka, S. Akiba, K. Sakai, Y. Matsushima

Research output: Contribution to journal › Article › peer-review

87 Citations (Scopus)

Abstract

λ/4-shifted InGaAsP/lnP DFB lasers were fabricated by a novel method, that is, simultaneous holographic exposure of positive and negative photoresists. The λ/4-phase-shift in the first-order corrugations formed on an InP substrate was confirmed through SEM views and diffracted beam patterns. A strong resonance peak below the threshold and singlewavelength operation above it at the Bragg wavelength were observed.

Original language	English
Pages (from-to)	1008-1010
Number of pages	3
Journal	Electronics Letters
Volume	20
Issue number	24
DOIs	https://doi.org/10.1049/el:19840686
Publication status	Published - 1984 Nov 22
Externally published	Yes

Keywords

Lasers and laser applications
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19840686

Cite this

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title = "λ/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists",

abstract = "λ/4-shifted InGaAsP/lnP DFB lasers were fabricated by a novel method, that is, simultaneous holographic exposure of positive and negative photoresists. The λ/4-phase-shift in the first-order corrugations formed on an InP substrate was confirmed through SEM views and diffracted beam patterns. A strong resonance peak below the threshold and singlewavelength operation above it at the Bragg wavelength were observed.",

keywords = "Lasers and laser applications, Semiconductor lasers",

author = "K. Utaka and S. Akiba and K. Sakai and Y. Matsushima",

year = "1984",

month = nov,

day = "22",

doi = "10.1049/el:19840686",

language = "English",

volume = "20",

pages = "1008--1010",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "24",

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T1 - λ/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists

AU - Utaka, K.

AU - Akiba, S.

AU - Sakai, K.

AU - Matsushima, Y.

PY - 1984/11/22

Y1 - 1984/11/22

N2 - λ/4-shifted InGaAsP/lnP DFB lasers were fabricated by a novel method, that is, simultaneous holographic exposure of positive and negative photoresists. The λ/4-phase-shift in the first-order corrugations formed on an InP substrate was confirmed through SEM views and diffracted beam patterns. A strong resonance peak below the threshold and singlewavelength operation above it at the Bragg wavelength were observed.

AB - λ/4-shifted InGaAsP/lnP DFB lasers were fabricated by a novel method, that is, simultaneous holographic exposure of positive and negative photoresists. The λ/4-phase-shift in the first-order corrugations formed on an InP substrate was confirmed through SEM views and diffracted beam patterns. A strong resonance peak below the threshold and singlewavelength operation above it at the Bragg wavelength were observed.

KW - Lasers and laser applications

KW - Semiconductor lasers

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U2 - 10.1049/el:19840686

DO - 10.1049/el:19840686

M3 - Article

AN - SCOPUS:0021519196

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JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

λ/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists

Abstract

Keywords

ASJC Scopus subject areas

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