0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer

M. Usami; Yuichi Matsushima; Y. Takahashi

doi:10.1109/2944.401203

0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer

M. Usami^*, Yuichi Matsushima, Y. Takahashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have proposed a GaAs-InGaP superlattice optical confinement layer (SL-OCL), which replaces graded InGaAsP alloy layers in 0.98-μm InGaAs-InGaP graded-index separate-confinement-heterostructure (GRINSCH) strained quantum-well (QW) lasers. Theoretical study of the multiquantum barrier (MQB) effect of the GaAs-InGaP SL indicates that electrons in the GaAs OCL feel more than two times higher barrier height than the classical bulk barrier height. Actually, the increase of internal quantum efficiency and the decrease of threshold current density were confirmed. Furthermore, the extremely high characteristic temperature T₀ of 300 K around RT was obtained. These improvements of laser characteristics, especially high T₀, is mainly owing to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.

Original language	English
Pages (from-to)	244-249
Number of pages	6
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	1
Issue number	2
DOIs	https://doi.org/10.1109/2944.401203
Publication status	Published - 1995 Jun
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

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title = "0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer",

abstract = "We have proposed a GaAs-InGaP superlattice optical confinement layer (SL-OCL), which replaces graded InGaAsP alloy layers in 0.98-μm InGaAs-InGaP graded-index separate-confinement-heterostructure (GRINSCH) strained quantum-well (QW) lasers. Theoretical study of the multiquantum barrier (MQB) effect of the GaAs-InGaP SL indicates that electrons in the GaAs OCL feel more than two times higher barrier height than the classical bulk barrier height. Actually, the increase of internal quantum efficiency and the decrease of threshold current density were confirmed. Furthermore, the extremely high characteristic temperature T0 of 300 K around RT was obtained. These improvements of laser characteristics, especially high T0, is mainly owing to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.",

author = "M. Usami and Yuichi Matsushima and Y. Takahashi",

year = "1995",

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doi = "10.1109/2944.401203",

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journal = "IEEE Journal on Selected Topics in Quantum Electronics",

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T1 - 0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer

AU - Usami, M.

AU - Matsushima, Yuichi

AU - Takahashi, Y.

PY - 1995/6

Y1 - 1995/6

N2 - We have proposed a GaAs-InGaP superlattice optical confinement layer (SL-OCL), which replaces graded InGaAsP alloy layers in 0.98-μm InGaAs-InGaP graded-index separate-confinement-heterostructure (GRINSCH) strained quantum-well (QW) lasers. Theoretical study of the multiquantum barrier (MQB) effect of the GaAs-InGaP SL indicates that electrons in the GaAs OCL feel more than two times higher barrier height than the classical bulk barrier height. Actually, the increase of internal quantum efficiency and the decrease of threshold current density were confirmed. Furthermore, the extremely high characteristic temperature T0 of 300 K around RT was obtained. These improvements of laser characteristics, especially high T0, is mainly owing to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.

AB - We have proposed a GaAs-InGaP superlattice optical confinement layer (SL-OCL), which replaces graded InGaAsP alloy layers in 0.98-μm InGaAs-InGaP graded-index separate-confinement-heterostructure (GRINSCH) strained quantum-well (QW) lasers. Theoretical study of the multiquantum barrier (MQB) effect of the GaAs-InGaP SL indicates that electrons in the GaAs OCL feel more than two times higher barrier height than the classical bulk barrier height. Actually, the increase of internal quantum efficiency and the decrease of threshold current density were confirmed. Furthermore, the extremely high characteristic temperature T0 of 300 K around RT was obtained. These improvements of laser characteristics, especially high T0, is mainly owing to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.

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0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer

Abstract

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