10-nm-wire fabrication in GaAs/AlGaAs MQWs by Cl2 reactive ion beam etching using SiO2 sidewall masks

H. Arimoto; H. Kitada; Y. Sugiyama; A. Tackeuchi; A. Endo; S. Muto

doi:10.1016/0167-9317(93)90078-J

10-nm-wire fabrication in GaAs/AlGaAs MQWs by Cl₂ reactive ion beam etching using SiO₂ sidewall masks

H. Arimoto^*, H. Kitada, Y. Sugiyama, A. Tackeuchi, A. Endo, S. Muto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Fabrication with a 20 nm size was demonstrated in a GaAs/AlGaAs multiquantum well (MQW) structure by reactive ion beam etching (RIBE) using SiO₂ sidewall masks. The sidewall width can be precisely controlled by deposition time of SiO₂. Size fluctuations are accordingly reduced. This paper also describes the results of photoluminescence measurements at 77 K, including a clear blue shift in the PL spectra for 20 nm MQW wires.

Original language	English
Pages (from-to)	303-306
Number of pages	4
Journal	Microelectronic Engineering
Volume	21
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(93)90078-J
Publication status	Published - 1993 Apr
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(93)90078-J

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abstract = "Fabrication with a 20 nm size was demonstrated in a GaAs/AlGaAs multiquantum well (MQW) structure by reactive ion beam etching (RIBE) using SiO2 sidewall masks. The sidewall width can be precisely controlled by deposition time of SiO2. Size fluctuations are accordingly reduced. This paper also describes the results of photoluminescence measurements at 77 K, including a clear blue shift in the PL spectra for 20 nm MQW wires.",

author = "H. Arimoto and H. Kitada and Y. Sugiyama and A. Tackeuchi and A. Endo and S. Muto",

year = "1993",

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doi = "10.1016/0167-9317(93)90078-J",

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AU - Arimoto, H.

AU - Kitada, H.

AU - Sugiyama, Y.

AU - Tackeuchi, A.

AU - Endo, A.

AU - Muto, S.

PY - 1993/4

Y1 - 1993/4

N2 - Fabrication with a 20 nm size was demonstrated in a GaAs/AlGaAs multiquantum well (MQW) structure by reactive ion beam etching (RIBE) using SiO2 sidewall masks. The sidewall width can be precisely controlled by deposition time of SiO2. Size fluctuations are accordingly reduced. This paper also describes the results of photoluminescence measurements at 77 K, including a clear blue shift in the PL spectra for 20 nm MQW wires.

AB - Fabrication with a 20 nm size was demonstrated in a GaAs/AlGaAs multiquantum well (MQW) structure by reactive ion beam etching (RIBE) using SiO2 sidewall masks. The sidewall width can be precisely controlled by deposition time of SiO2. Size fluctuations are accordingly reduced. This paper also describes the results of photoluminescence measurements at 77 K, including a clear blue shift in the PL spectra for 20 nm MQW wires.

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10-nm-wire fabrication in GaAs/AlGaAs MQWs by Cl₂ reactive ion beam etching using SiO₂ sidewall masks

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ASJC Scopus subject areas

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