100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays

Takao Yamaguchi*, Keiichi Yodoshi, Kimihide Minakuchi, Norio Tabuchi, Yasuyuki Bessho, Yasuaki Inoue, Koji Komeda, Kazushi Mori, Atsushi Tajiri, Koji Tominaga

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


Four-beam individually addressable monolithic AlGaAs laser-diode arrays have been developed in which each laser element can emit over 100 mW of output power in single-mode operation. The structural features of this laser include current-blocking regions near the facets and a long cavity length to obtain higher power, as well as a cBN heatsink and a 70 μm-thick laser chip to improve thermal crosstalk between laser elements. The maximum output power of each laser element is about 200 mW and the lasing wavelength is about 834 nm. Thermal crosstalk between 100 μm-spaced neighboring elements is only 1.0% at 100 mW.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Place of PublicationBellingham, WA, United States
PublisherPubl by Int Soc for Optical Engineering
Number of pages9
ISBN (Print)0819405086
Publication statusPublished - 1991
Externally publishedYes
EventLaser Diode Technology and Applications III - Los Angeles, CA, USA
Duration: 1991 Jan 231991 Jan 25


OtherLaser Diode Technology and Applications III
CityLos Angeles, CA, USA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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