@inproceedings{a3e73780a7a148c2aa79878f19f5e19d,
title = "133GHz CMOS power amplifier with 16dB gain and +8dBm saturated output power for multi-gigabit communication",
abstract = "Indoor communication is desired in CMOS millimeter-wave transceivers. To realize indoor communication, a power amplifier with a high RF output power without compromising gain, bandwidth or power efficiency is required. In this paper, a strategic design for gate width selection and matching-network optimization is introduced. A power amplifier is fabricated using a 40nm CMOS technology process with a chip area of 0.30mm2 and a power consumption of 89.1mW at 1.1V DC supply. Its peak gain is 16.8dB at 133GHz and its 3dB bandwidth is 13.0GHz. Its output-referred 1dB compression point is 6.8dBm, its saturated output power is 8.6dBm and its peak power added efficiency is 7.4%. The performance of this power amplifier is evaluated using an indicator and it is confirmed that it has the best performance among power amplifiers over 100GHz.",
keywords = "ASK, CMOS, D-band, Millimeter-wave",
author = "Kosuke Katayama and Mizuki Motoyoshi and Kyoya Takano and Yang, {Li Chen} and Minoru Fujishima",
year = "2013",
month = dec,
day = "1",
language = "English",
isbn = "9782874870323",
series = "European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013: 8th European Microwave Integrated Circuits Conference",
pages = "69--72",
booktitle = "European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMIC 2013",
note = "2013 8th European Microwave Integrated Circuits Conference, EuMIC 2013 - Held as Part of 16th European Microwave Week, EuMW 2013 ; Conference date: 06-10-2013 Through 08-10-2013",
}