1550 nm-Band InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers Grown on InP(311)B Substrate with Side-Wall Gratings Simultaneously Fabricated with a Ridge Waveguide

Runa Kaneko; Ryosuke Morita; Ryumi Katsuhara; Ryota Yabuki; Atsushi Matsumoto; Koichi Akahane; Yuichi Matsushima; Hiroshi Ishikawa; Katsuyuki Utaka

doi:10.1002/pssa.202100453

1550 nm-Band InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers Grown on InP(311)B Substrate with Side-Wall Gratings Simultaneously Fabricated with a Ridge Waveguide

Runa Kaneko^*, Ryosuke Morita, Ryumi Katsuhara, Ryota Yabuki, Atsushi Matsumoto, Koichi Akahane, Yuichi Matsushima, Hiroshi Ishikawa, Katsuyuki Utaka

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A 1550 nm-band InAs/InGaAlAs quantum dot (QD) distributed feedback (DFB) laser is fabricated, in which the side-wall grating is formed in a simultaneous process with the ridge waveguide, and room-temperature continuous-wave single-mode oscillation is achieved. A rather low-threshold current density of about 2.2 kA cm⁻² is obtained. Side-mode suppression ratios (SMSRs) are 28 dB just above the threshold current I_th and 44 dB at I/I_th = 2.0. Antireflection (AR) coating suppresses the amplified spontaneous emission (ASE) and increases the slope efficiency by a factor of 1.3.

Original language	English
Article number	2100453
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	219
Issue number	4
DOIs	https://doi.org/10.1002/pssa.202100453
Publication status	Published - 2022 Feb

Keywords

1550 nm-band quantum dots
InAs/InGaAlAs
distributed feedback lasers
single-mode oscillations

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.202100453

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Kaneko, R., Morita, R., Katsuhara, R., Yabuki, R., Matsumoto, A., Akahane, K., Matsushima, Y., Ishikawa, H., & Utaka, K. (2022). 1550 nm-Band InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers Grown on InP(311)B Substrate with Side-Wall Gratings Simultaneously Fabricated with a Ridge Waveguide. Physica Status Solidi (A) Applications and Materials Science, 219(4), Article 2100453. https://doi.org/10.1002/pssa.202100453

1550 nm-Band InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers Grown on InP(311)B Substrate with Side-Wall Gratings Simultaneously Fabricated with a Ridge Waveguide. / Kaneko, Runa; Morita, Ryosuke; Katsuhara, Ryumi et al.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 219, No. 4, 2100453, 02.2022.

Research output: Contribution to journal › Article › peer-review

Kaneko, R, Morita, R, Katsuhara, R, Yabuki, R, Matsumoto, A, Akahane, K, Matsushima, Y, Ishikawa, H & Utaka, K 2022, '1550 nm-Band InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers Grown on InP(311)B Substrate with Side-Wall Gratings Simultaneously Fabricated with a Ridge Waveguide', Physica Status Solidi (A) Applications and Materials Science, vol. 219, no. 4, 2100453. https://doi.org/10.1002/pssa.202100453

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title = "1550 nm-Band InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers Grown on InP(311)B Substrate with Side-Wall Gratings Simultaneously Fabricated with a Ridge Waveguide",

abstract = "A 1550 nm-band InAs/InGaAlAs quantum dot (QD) distributed feedback (DFB) laser is fabricated, in which the side-wall grating is formed in a simultaneous process with the ridge waveguide, and room-temperature continuous-wave single-mode oscillation is achieved. A rather low-threshold current density of about 2.2 kA cm−2 is obtained. Side-mode suppression ratios (SMSRs) are 28 dB just above the threshold current Ith and 44 dB at I/Ith = 2.0. Antireflection (AR) coating suppresses the amplified spontaneous emission (ASE) and increases the slope efficiency by a factor of 1.3.",

keywords = "1550 nm-band quantum dots, InAs/InGaAlAs, distributed feedback lasers, single-mode oscillations",

author = "Runa Kaneko and Ryosuke Morita and Ryumi Katsuhara and Ryota Yabuki and Atsushi Matsumoto and Koichi Akahane and Yuichi Matsushima and Hiroshi Ishikawa and Katsuyuki Utaka",

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AU - Kaneko, Runa

AU - Morita, Ryosuke

AU - Katsuhara, Ryumi

AU - Yabuki, Ryota

AU - Matsumoto, Atsushi

AU - Akahane, Koichi

AU - Matsushima, Yuichi

AU - Ishikawa, Hiroshi

AU - Utaka, Katsuyuki

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AB - A 1550 nm-band InAs/InGaAlAs quantum dot (QD) distributed feedback (DFB) laser is fabricated, in which the side-wall grating is formed in a simultaneous process with the ridge waveguide, and room-temperature continuous-wave single-mode oscillation is achieved. A rather low-threshold current density of about 2.2 kA cm−2 is obtained. Side-mode suppression ratios (SMSRs) are 28 dB just above the threshold current Ith and 44 dB at I/Ith = 2.0. Antireflection (AR) coating suppresses the amplified spontaneous emission (ASE) and increases the slope efficiency by a factor of 1.3.

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1550 nm-Band InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers Grown on InP(311)B Substrate with Side-Wall Gratings Simultaneously Fabricated with a Ridge Waveguide

Abstract

Keywords

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