2 W/mm output power density at 1 GHz for diamond FETs

M. Kasu*, K. Ueda, H. Ye, Y. Yamauchi, S. Sasaki, T. Makimoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

128 Citations (Scopus)


Great improvement in the output power density of diamond FETs on a diamond homoepitaxial layer grown using a high-purity source gas is reported. For a device with a gate length of 0.1 μm and gate width of 100 μm, at 1 GHz, maximum output power density of 2.1 W/mm, maximum power gain of 10.9 dB, and power added efficiency of 31.8% were obtained.

Original languageEnglish
Pages (from-to)1249-1250
Number of pages2
JournalElectronics Letters
Issue number22
Publication statusPublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


Dive into the research topics of '2 W/mm output power density at 1 GHz for diamond FETs'. Together they form a unique fingerprint.

Cite this