(211) oriented ZnTe growth on m-plane sapphire by MBE

Taizo Nakasu; Masakazu Kobayashi; Hiroyoshi Togo; Toshiaki Asahi

doi:10.1002/pssc.201300239

(211) oriented ZnTe growth on m-plane sapphire by MBE

Taizo Nakasu^*, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 °C. When the layer was grown at 350 °C, the (211) oriented domain dominated the film.

Original language	English
Pages (from-to)	1381-1384
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	10
Issue number	11
DOIs	https://doi.org/10.1002/pssc.201300239
Publication status	Published - 2013 Nov

Keywords

Heteroepitaxy
Molecular beam epitaxy
Pole figure
Sapphire
ZnTe

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201300239

Cite this

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title = "(211) oriented ZnTe growth on m-plane sapphire by MBE",

abstract = "Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 °C. When the layer was grown at 350 °C, the (211) oriented domain dominated the film.",

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AU - Nakasu, Taizo

AU - Kobayashi, Masakazu

AU - Togo, Hiroyoshi

AU - Asahi, Toshiaki

PY - 2013/11

Y1 - 2013/11

N2 - Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 °C. When the layer was grown at 350 °C, the (211) oriented domain dominated the film.

AB - Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 °C. When the layer was grown at 350 °C, the (211) oriented domain dominated the film.

KW - Heteroepitaxy

KW - Molecular beam epitaxy

KW - Pole figure

KW - Sapphire

KW - ZnTe

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(211) oriented ZnTe growth on m-plane sapphire by MBE

Abstract

Keywords

ASJC Scopus subject areas

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