(211) oriented ZnTe growth on m-plane sapphire by MBE

Taizo Nakasu*, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Single-crystalline and single domain ZnTe thin films are sought for high-performance terahertz wave detectors, and ZnTe/sapphire heterostructures were considered since the Electro-Optical (EO) effect could be obtained only from epilayers. ZnTe epilayers were grown on m-plane sapphire substrates by molecular beam epitaxy, and the potential of single domain epilayers was explored. Through the X-ray diffraction pole figure measurement it was confirmed that one (100) oriented ZnTe domain along with two kinds of (211) oriented domains were formed on the m-plane sapphire when the layer was grown at 340 °C. When the layer was grown at 350 °C, the (211) oriented domain dominated the film.

Original languageEnglish
Pages (from-to)1381-1384
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number11
Publication statusPublished - 2013 Nov


  • Heteroepitaxy
  • Molecular beam epitaxy
  • Pole figure
  • Sapphire
  • ZnTe

ASJC Scopus subject areas

  • Condensed Matter Physics


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