24-80 GHz, 0.024 mm2 miniaturized balun using defected ground structure for Si-based RF IC applications

Hang Xiao; Xin Yang; Toshihiko Yoshimasu

doi:10.1109/EDSSC.2014.7061228

24-80 GHz, 0.024 mm² miniaturized balun using defected ground structure for Si-based RF IC applications

Hang Xiao, Xin Yang, Toshihiko Yoshimasu

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A compact broadband balun on a silicon substrate is proposed for millimeter-wave applications. By utilizing a novel defected ground structure, it is expected that the balun exhibits an amplitude balance less than 0.5 dB and a phase balance less than 2 degrees in a frequency range from 26 GHz to 80 GHz. The insertion loss is less than 3 dB in the operational frequency band. The balun achieves a bandwidth of 108 % and the area occupies only 0.024 mm².

Original language	English
Title of host publication	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479923342
DOIs	https://doi.org/10.1109/EDSSC.2014.7061228
Publication status	Published - 2014 Mar 13
Event	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, China Duration: 2014 Jun 18 → 2014 Jun 20

Publication series

Name	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

Other

Other	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
Country/Territory	China
City	Chengdu
Period	14/6/18 → 14/6/20

Keywords

Defected ground structure
Marchand balun
Millimeter-wave

ASJC Scopus subject areas

Electrical and Electronic Engineering
Hardware and Architecture

Access to Document

10.1109/EDSSC.2014.7061228

Cite this

Xiao, H., Yang, X., & Yoshimasu, T. (2014). 24-80 GHz, 0.024 mm² miniaturized balun using defected ground structure for Si-based RF IC applications. In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 Article 7061228 (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2014.7061228

24-80 GHz, 0.024 mm² miniaturized balun using defected ground structure for Si-based RF IC applications. / Xiao, Hang; Yang, Xin; Yoshimasu, Toshihiko.
2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 7061228 (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Xiao, H, Yang, X & Yoshimasu, T 2014, 24-80 GHz, 0.024 mm² miniaturized balun using defected ground structure for Si-based RF IC applications. in 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014., 7061228, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014, Chengdu, China, 14/6/18. https://doi.org/10.1109/EDSSC.2014.7061228

Xiao H, Yang X, Yoshimasu T. 24-80 GHz, 0.024 mm² miniaturized balun using defected ground structure for Si-based RF IC applications. In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7061228. (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014). doi: 10.1109/EDSSC.2014.7061228

Xiao, Hang ; Yang, Xin ; Yoshimasu, Toshihiko. / 24-80 GHz, 0.024 mm² miniaturized balun using defected ground structure for Si-based RF IC applications. 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014).

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