2.4-GHz-band low-voltage LC-VCO IC with simplified noise filtering in 180-nm CMOS

Xinyi Wang; Xin Yang; Xiao Xu; Toshihiko Yoshimasu

doi:10.1109/IEEE-IWS.2016.7585430

2.4-GHz-band low-voltage LC-VCO IC with simplified noise filtering in 180-nm CMOS

Xinyi Wang, Xin Yang, Xiao Xu, Toshihiko Yoshimasu

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Citations (Scopus)

Abstract

This paper presents a low-voltage and low phase noise LC-VCO IC with simplified noise filtering in 180-nm CMOS technology. The novel VCO IC includes a cross-coupled pMOSFET pair, an LC resonator, buffer amplifiers and a tail inductor for noise filtering. The novel and conventional LC-VCO ICs are designed, fabricated and fully tested on wafer. At a power supply voltage of only 0.5 V, the novel VCO IC has exhibited a phase noise of -119.4 dBc/Hz at 1 MHz offset from the 2.25 GHz carrier frequency, which is 2.6 dB better than the conventional one.

Original language	English
Title of host publication	2016 IEEE MTT-S International Wireless Symposium, IWS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509006960
DOIs	https://doi.org/10.1109/IEEE-IWS.2016.7585430
Publication status	Published - 2016 Oct 6
Event	2016 IEEE MTT-S International Wireless Symposium, IWS 2016 - Shanghai, China Duration: 2016 Mar 14 → 2016 Mar 16

Publication series

Name	2016 IEEE MTT-S International Wireless Symposium, IWS 2016

Other

Other	2016 IEEE MTT-S International Wireless Symposium, IWS 2016
Country/Territory	China
City	Shanghai
Period	16/3/14 → 16/3/16

Keywords

180-nm CMOS technology
LC-VCO
low phase noise
low supply voltage
noise filtering
optimization

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/IEEE-IWS.2016.7585430

Cite this

Wang, X., Yang, X., Xu, X., & Yoshimasu, T. (2016). 2.4-GHz-band low-voltage LC-VCO IC with simplified noise filtering in 180-nm CMOS. In 2016 IEEE MTT-S International Wireless Symposium, IWS 2016 Article 7585430 (2016 IEEE MTT-S International Wireless Symposium, IWS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEEE-IWS.2016.7585430

2.4-GHz-band low-voltage LC-VCO IC with simplified noise filtering in 180-nm CMOS. / Wang, Xinyi; Yang, Xin; Xu, Xiao et al.
2016 IEEE MTT-S International Wireless Symposium, IWS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7585430 (2016 IEEE MTT-S International Wireless Symposium, IWS 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, X, Yang, X, Xu, X & Yoshimasu, T 2016, 2.4-GHz-band low-voltage LC-VCO IC with simplified noise filtering in 180-nm CMOS. in 2016 IEEE MTT-S International Wireless Symposium, IWS 2016., 7585430, 2016 IEEE MTT-S International Wireless Symposium, IWS 2016, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE MTT-S International Wireless Symposium, IWS 2016, Shanghai, China, 16/3/14. https://doi.org/10.1109/IEEE-IWS.2016.7585430

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title = "2.4-GHz-band low-voltage LC-VCO IC with simplified noise filtering in 180-nm CMOS",

abstract = "This paper presents a low-voltage and low phase noise LC-VCO IC with simplified noise filtering in 180-nm CMOS technology. The novel VCO IC includes a cross-coupled pMOSFET pair, an LC resonator, buffer amplifiers and a tail inductor for noise filtering. The novel and conventional LC-VCO ICs are designed, fabricated and fully tested on wafer. At a power supply voltage of only 0.5 V, the novel VCO IC has exhibited a phase noise of -119.4 dBc/Hz at 1 MHz offset from the 2.25 GHz carrier frequency, which is 2.6 dB better than the conventional one.",

keywords = "180-nm CMOS technology, LC-VCO, low phase noise, low supply voltage, noise filtering, optimization",

author = "Xinyi Wang and Xin Yang and Xiao Xu and Toshihiko Yoshimasu",

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N2 - This paper presents a low-voltage and low phase noise LC-VCO IC with simplified noise filtering in 180-nm CMOS technology. The novel VCO IC includes a cross-coupled pMOSFET pair, an LC resonator, buffer amplifiers and a tail inductor for noise filtering. The novel and conventional LC-VCO ICs are designed, fabricated and fully tested on wafer. At a power supply voltage of only 0.5 V, the novel VCO IC has exhibited a phase noise of -119.4 dBc/Hz at 1 MHz offset from the 2.25 GHz carrier frequency, which is 2.6 dB better than the conventional one.

AB - This paper presents a low-voltage and low phase noise LC-VCO IC with simplified noise filtering in 180-nm CMOS technology. The novel VCO IC includes a cross-coupled pMOSFET pair, an LC resonator, buffer amplifiers and a tail inductor for noise filtering. The novel and conventional LC-VCO ICs are designed, fabricated and fully tested on wafer. At a power supply voltage of only 0.5 V, the novel VCO IC has exhibited a phase noise of -119.4 dBc/Hz at 1 MHz offset from the 2.25 GHz carrier frequency, which is 2.6 dB better than the conventional one.

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2.4-GHz-band low-voltage LC-VCO IC with simplified noise filtering in 180-nm CMOS

Abstract

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Keywords

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