2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS

Xiao Xu; Xin Yang; Toshihiko Yoshimasu

doi:10.1109/EDSSC.2015.7285037

2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS

Xiao Xu, Xin Yang, Toshihiko Yoshimasu

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An ultra-low-voltage low phase noise LC-VCO IC has been demonstrated using 180-nm CMOS technology. The LC-VCO IC includes a cross-coupled pMOSFET pair, a symmetric three-port spiral inductor, MOS varactors and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully tested on wafer. The VCO IC exhibits a phase noise of -118.9 dBc/Hz at 1 MHz offset from the 2.29 GHz carrier at a supply voltage of only 0.5 V. Moreover, minimum operation voltage of only 0.25 V has been achieved.

Original language	English
Title of host publication	Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	13-16
Number of pages	4
ISBN (Electronic)	9781479983636
DOIs	https://doi.org/10.1109/EDSSC.2015.7285037
Publication status	Published - 2015 Sept 30
Event	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore Duration: 2015 Jun 1 → 2015 Jun 4

Publication series

Name	Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

Other

Other	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
Country/Territory	Singapore
City	Singapore
Period	15/6/1 → 15/6/4

Keywords

LC-VCO
Low Phase Noise
Ultra-Low-Voltage

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/EDSSC.2015.7285037

Cite this

Xu, X., Yang, X., & Yoshimasu, T. (2015). 2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS. In Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 (pp. 13-16). [7285037] (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2015.7285037

2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS. / Xu, Xiao; Yang, Xin; Yoshimasu, Toshihiko.
Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 13-16 7285037 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Xu, X, Yang, X & Yoshimasu, T 2015, 2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS. in Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015., 7285037, Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, Institute of Electrical and Electronics Engineers Inc., pp. 13-16, 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, Singapore, Singapore, 15/6/1. https://doi.org/10.1109/EDSSC.2015.7285037

Xu X, Yang X, Yoshimasu T. 2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS. In Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 13-16. 7285037. (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015). doi: 10.1109/EDSSC.2015.7285037

Xu, Xiao ; Yang, Xin ; Yoshimasu, Toshihiko. / 2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS. Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 13-16 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015).

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title = "2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS",

abstract = "An ultra-low-voltage low phase noise LC-VCO IC has been demonstrated using 180-nm CMOS technology. The LC-VCO IC includes a cross-coupled pMOSFET pair, a symmetric three-port spiral inductor, MOS varactors and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully tested on wafer. The VCO IC exhibits a phase noise of -118.9 dBc/Hz at 1 MHz offset from the 2.29 GHz carrier at a supply voltage of only 0.5 V. Moreover, minimum operation voltage of only 0.25 V has been achieved.",

keywords = "LC-VCO, Low Phase Noise, Ultra-Low-Voltage",

author = "Xiao Xu and Xin Yang and Toshihiko Yoshimasu",

note = "Funding Information: Acknowledgment: This work is supported by Japan Society for the Promotion of Science (JSPS) KAKENHI Grant-in-Aid for Scientific Research (B) Number 23360162. This work is supported by VLSI Design and Education Center (VDEC), University of Tokyo with the collaboration with Cadence Corporation, Mentor Graphics Corporation and Keysight Technologies. Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 ; Conference date: 01-06-2015 Through 04-06-2015",

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N2 - An ultra-low-voltage low phase noise LC-VCO IC has been demonstrated using 180-nm CMOS technology. The LC-VCO IC includes a cross-coupled pMOSFET pair, a symmetric three-port spiral inductor, MOS varactors and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully tested on wafer. The VCO IC exhibits a phase noise of -118.9 dBc/Hz at 1 MHz offset from the 2.29 GHz carrier at a supply voltage of only 0.5 V. Moreover, minimum operation voltage of only 0.25 V has been achieved.

AB - An ultra-low-voltage low phase noise LC-VCO IC has been demonstrated using 180-nm CMOS technology. The LC-VCO IC includes a cross-coupled pMOSFET pair, a symmetric three-port spiral inductor, MOS varactors and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully tested on wafer. The VCO IC exhibits a phase noise of -118.9 dBc/Hz at 1 MHz offset from the 2.29 GHz carrier at a supply voltage of only 0.5 V. Moreover, minimum operation voltage of only 0.25 V has been achieved.

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2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS

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