TY - GEN
T1 - 25-GHz-band High Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Gate Capacitor in 45-nm SOI CMOS
AU - Sugiura, Tsuyoshi
AU - Yoshimasu, Toshihiko
N1 - Funding Information:
The authors would like to thank GLOBALFOUNDRIES for their chip fabrication and continuous support.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - This paper presents a 2S-GHz-band high-efficiency power amplifier (P A) with a novel adaptively controlled gate capacitor circuit for 5th generation (5G) mobile terminal application in the 45-nm silicon on insulator (SOI) CMOS process. This novel gate capacitor circuit effectively controls the RF swing of each stacked FET to achieve high efficiency in the several-dB back-off region. The PA adopts a 4 stacked FET structure to increase the output power because of the low breakdown voltage issue of scaled MOS FETs. An adaptive bias circuit is employed for high linearity and high back-off efficiency. At a supply voltage of 4 V, the fabricated P A exhibited a saturated output power of 21.5 dBm, a peak power added efficiency (P AE) of 40.9%, a gain of 17.6 dB, and an ITRS FoM of 83.2 dB. The effective P A area was 0.55 mm by 0.4 mm.
AB - This paper presents a 2S-GHz-band high-efficiency power amplifier (P A) with a novel adaptively controlled gate capacitor circuit for 5th generation (5G) mobile terminal application in the 45-nm silicon on insulator (SOI) CMOS process. This novel gate capacitor circuit effectively controls the RF swing of each stacked FET to achieve high efficiency in the several-dB back-off region. The PA adopts a 4 stacked FET structure to increase the output power because of the low breakdown voltage issue of scaled MOS FETs. An adaptive bias circuit is employed for high linearity and high back-off efficiency. At a supply voltage of 4 V, the fabricated P A exhibited a saturated output power of 21.5 dBm, a peak power added efficiency (P AE) of 40.9%, a gain of 17.6 dB, and an ITRS FoM of 83.2 dB. The effective P A area was 0.55 mm by 0.4 mm.
KW - 5G
KW - adaptive bias
KW - adaptive gate capacitor
KW - back-off efficiency
KW - power amplifier
KW - SOI CMOS
KW - stacked-FET
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U2 - 10.1109/PAWR53092.2022.9719847
DO - 10.1109/PAWR53092.2022.9719847
M3 - Conference contribution
AN - SCOPUS:85127893682
T3 - 2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, PAWR 2022
SP - 26
EP - 28
BT - 2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, PAWR 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications, PAWR 2022
Y2 - 16 January 2022 through 19 January 2022
ER -