28mW 10Gbps transmitter for 120GHz ASK transceiver

Kosuke Katayama; Mizuki Motoyoshi; Kyoya Takano; Naoko Ono; Minoru Fujishima

doi:10.1109/MWSYM.2012.6258376

28mW 10Gbps transmitter for 120GHz ASK transceiver

Kosuke Katayama^*, Mizuki Motoyoshi, Kyoya Takano, Naoko Ono, Minoru Fujishima

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

In this paper, we describe a low-power millimeter-wave amplitude-shift- keying transmitter architecture and its design technique. This architecture adopts a push-push-type oscillator. The load-pull-like design technique for the oscillator enables us to extract large output power with the same power dissipation and to remove the power amplifier from the transmitter. The transmitter is fabricated using a 40nm CMOS technology. The core area is 0.11mm ². The measured carrier frequency is adjusted by the backgate voltages of MOSFETs centering at 122GHz. The maximum output power is +0.1dBm with 28.3mW power dissipation. The on-off ratio is 18.2dB and the maximum modulation speed is more than 10Gbps.

Original language	English
Title of host publication	IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium
DOIs	https://doi.org/10.1109/MWSYM.2012.6258376
Publication status	Published - 2012 Oct 3
Externally published	Yes
Event	2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada Duration: 2012 Jun 17 → 2012 Jun 22

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
ISSN (Print)	0149-645X

Other

Other	2012 IEEE MTT-S International Microwave Symposium, IMS 2012
Country/Territory	Canada
City	Montreal, QC
Period	12/6/17 → 12/6/22

Keywords

Amplitude shift keying
D-band transmitter
Load pull optimization
Millimeter wave
Power amplifier less
Push-push oscillator

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2012.6258376

Cite this

Katayama, K, Motoyoshi, M, Takano, K, Ono, N & Fujishima, M 2012, 28mW 10Gbps transmitter for 120GHz ASK transceiver. in IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium., 6258376, IEEE MTT-S International Microwave Symposium Digest, 2012 IEEE MTT-S International Microwave Symposium, IMS 2012, Montreal, QC, Canada, 12/6/17. https://doi.org/10.1109/MWSYM.2012.6258376

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title = "28mW 10Gbps transmitter for 120GHz ASK transceiver",

abstract = "In this paper, we describe a low-power millimeter-wave amplitude-shift- keying transmitter architecture and its design technique. This architecture adopts a push-push-type oscillator. The load-pull-like design technique for the oscillator enables us to extract large output power with the same power dissipation and to remove the power amplifier from the transmitter. The transmitter is fabricated using a 40nm CMOS technology. The core area is 0.11mm 2. The measured carrier frequency is adjusted by the backgate voltages of MOSFETs centering at 122GHz. The maximum output power is +0.1dBm with 28.3mW power dissipation. The on-off ratio is 18.2dB and the maximum modulation speed is more than 10Gbps.",

keywords = "Amplitude shift keying, D-band transmitter, Load pull optimization, Millimeter wave, Power amplifier less, Push-push oscillator",

author = "Kosuke Katayama and Mizuki Motoyoshi and Kyoya Takano and Naoko Ono and Minoru Fujishima",

year = "2012",

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AU - Katayama, Kosuke

AU - Motoyoshi, Mizuki

AU - Takano, Kyoya

AU - Ono, Naoko

AU - Fujishima, Minoru

PY - 2012/10/3

Y1 - 2012/10/3

N2 - In this paper, we describe a low-power millimeter-wave amplitude-shift- keying transmitter architecture and its design technique. This architecture adopts a push-push-type oscillator. The load-pull-like design technique for the oscillator enables us to extract large output power with the same power dissipation and to remove the power amplifier from the transmitter. The transmitter is fabricated using a 40nm CMOS technology. The core area is 0.11mm 2. The measured carrier frequency is adjusted by the backgate voltages of MOSFETs centering at 122GHz. The maximum output power is +0.1dBm with 28.3mW power dissipation. The on-off ratio is 18.2dB and the maximum modulation speed is more than 10Gbps.

AB - In this paper, we describe a low-power millimeter-wave amplitude-shift- keying transmitter architecture and its design technique. This architecture adopts a push-push-type oscillator. The load-pull-like design technique for the oscillator enables us to extract large output power with the same power dissipation and to remove the power amplifier from the transmitter. The transmitter is fabricated using a 40nm CMOS technology. The core area is 0.11mm 2. The measured carrier frequency is adjusted by the backgate voltages of MOSFETs centering at 122GHz. The maximum output power is +0.1dBm with 28.3mW power dissipation. The on-off ratio is 18.2dB and the maximum modulation speed is more than 10Gbps.

KW - Amplitude shift keying

KW - D-band transmitter

KW - Load pull optimization

KW - Millimeter wave

KW - Power amplifier less

KW - Push-push oscillator

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BT - IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium

T2 - 2012 IEEE MTT-S International Microwave Symposium, IMS 2012

Y2 - 17 June 2012 through 22 June 2012

ER -

28mW 10Gbps transmitter for 120GHz ASK transceiver

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Keywords

ASJC Scopus subject areas

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