Fingerprint
Dive into the research topics of '300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al2O3Gate Insulator'. Together they form a unique fingerprint.- Sort by
- Weight
- Alphabetically
300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al2O3Gate Insulator
Yu Fu, Yuhao Chang, Xiaohua Zhu, Atsushi Hiraiwa, Ruimin Xu, Yuehang Xu, Hiroshi Kawarada*
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
1
Citation
(Scopus)