Abstract
This letter reports the small-signal and large-signal performances at high drain voltage (VDS) ranging up to 60 V for a 0.5 μ m gate length two-dimensional hole gas diamond metal-oxide-semiconductor field-effect transistor with a 100-nm-thick atomic-layer-deposited Al2O3 film on a IIa-type polycrystalline diamond substrate with (110) preferential surfaces. This diamond FET demonstrated a cutoff frequency (fT) of 31 GHz, indicating that its carrier velocity was reaching 1.0× 107 cm/s for the first time in diamond. In addition, a fT of 24 GHz was obtained at VDS=-60 V, thus giving a f T× VDS product of 1.44 THz · V. This diamond FET is promising for use as a high-frequency transistor under high voltage conditions. Under application of a high voltage, a maximum output power density of 3.8 W/mm (the highest in diamond) with an associated gain and power added efficiency were 11.6 dB and 23.1% was obtained when biased at VDS=-50 V using a load-pull system at 1 GHz.
Original language | English |
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Article number | 8574928 |
Pages (from-to) | 279-282 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 40 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2019 Feb |
Keywords
- Diamond
- MOSFET
- high frequency
- high voltage
- output power
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering