TY - JOUR
T1 - 47.5 ghz membrane-iii-v-on-si directly modulated laser for sub-pj/bit 100-gbps transmission
AU - Diamantopoulos, Nikolaos Panteleimon
AU - Yamaoka, Suguru
AU - Fujii, Takuro
AU - Nishi, Hidetaka
AU - Takeda, Koji
AU - Tsuchizawa, Tai
AU - Kakitsuka, Takaaki
AU - Matsuo, Shinji
N1 - Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2021/2
Y1 - 2021/2
N2 - Near-future upgrades of intra data center networks and high-performance computing systems would require optical interconnects capable of operating at beyond 100 Gbps/lane. In order for this evolution to be achieved in a sustainable way, high-speed yet energy-efficient transceivers are in need. Towards this direction we have previously demonstrated directly-modulated lasers (DMLs) capable of operating at 50 Gbps/lane with sub-pJ/bit efficiencies based on our novel membrane-III-V-on-Si technology. However, there exists an inherent tradeoff between modulation speed and power consumption due to the carrier-photon dynamics in DMLs. In this work, we alleviate this tradeoff by introducing photon–photon resonance dynamics in our energy-efficient membrane DMLs-on-Si design and demonstrate a device with a maximum 3-dB bandwidth of 47.5 GHz. This denotes a bandwidth increase of more than 2x times compared to our previous membrane DMLs-on-Si. Moreover, the DML is capable of delivering 60-GBaud PAM-4 signals under Ethernet’s KP4-FEC threshold (net data rate of 113.42 Gbps) over 2-km of standard single-mode fiber transmission. DC energy-efficiencies of 0.17 pJ/bit at 25◦ C and 0.34 pJ/bit at 50◦ C have been achieved for the >100-Gbps signals. Deploying such DMLs in an integrated multichannel transceiver should ensure a smooth evolution towards Terabit-class Ethernet links and on-board optics subsystems.
AB - Near-future upgrades of intra data center networks and high-performance computing systems would require optical interconnects capable of operating at beyond 100 Gbps/lane. In order for this evolution to be achieved in a sustainable way, high-speed yet energy-efficient transceivers are in need. Towards this direction we have previously demonstrated directly-modulated lasers (DMLs) capable of operating at 50 Gbps/lane with sub-pJ/bit efficiencies based on our novel membrane-III-V-on-Si technology. However, there exists an inherent tradeoff between modulation speed and power consumption due to the carrier-photon dynamics in DMLs. In this work, we alleviate this tradeoff by introducing photon–photon resonance dynamics in our energy-efficient membrane DMLs-on-Si design and demonstrate a device with a maximum 3-dB bandwidth of 47.5 GHz. This denotes a bandwidth increase of more than 2x times compared to our previous membrane DMLs-on-Si. Moreover, the DML is capable of delivering 60-GBaud PAM-4 signals under Ethernet’s KP4-FEC threshold (net data rate of 113.42 Gbps) over 2-km of standard single-mode fiber transmission. DC energy-efficiencies of 0.17 pJ/bit at 25◦ C and 0.34 pJ/bit at 50◦ C have been achieved for the >100-Gbps signals. Deploying such DMLs in an integrated multichannel transceiver should ensure a smooth evolution towards Terabit-class Ethernet links and on-board optics subsystems.
KW - Data centers
KW - Directly modulated lasers
KW - III-V on Si
KW - Photon-photon resonance
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U2 - 10.3390/photonics8020031
DO - 10.3390/photonics8020031
M3 - Article
AN - SCOPUS:85100614121
SN - 2304-6732
VL - 8
SP - 1
EP - 11
JO - Photonics
JF - Photonics
IS - 2
M1 - 31
ER -