5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

Xin Yang; Tsuyoshi Sugiura; Norihisa Otani; Tadamasa Murakami; Eiichiro Otobe; Toshihiko Yoshimasu

doi:10.1109/EuMIC.2014.6997884

5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

Xin Yang, Tsuyoshi Sugiura, Norihisa Otani, Tadamasa Murakami, Eiichiro Otobe, Toshihiko Yoshimasu

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

This paper presents a highly linear 5-GHz band power amplifier IC with integrated novel CMOS active bias circuit in SiGe BiCMOS technology for wireless LAN applications. The power amplifier IC consists of three-stage amplifier, the CMOS active bias circuit for linearizing SiGe HBT and all matching circuits. The power amplifier IC has exhibited a measured output power of 17.0 dBm, an EVM of 0.9 % and a dc current consumption of 284 mA under 54 Mbps OFDM signal at 5.4 GHz.

Original language	English
Title of host publication	European Microwave Week 2014
Subtitle of host publication	"Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	428-431
Number of pages	4
ISBN (Electronic)	9782874870361
DOIs	https://doi.org/10.1109/EuMIC.2014.6997884
Publication status	Published - 2014 Dec 23
Event	9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, Italy Duration: 2014 Oct 6 → 2014 Oct 7

Publication series

Name	European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference

Conference

Conference	9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
Country/Territory	Italy
City	Rome
Period	14/10/6 → 14/10/7

Keywords

CMOS active bias circuit
Linear power amplifier
SiGe BiCMOS
WLAN

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EuMIC.2014.6997884

Cite this

Yang, X., Sugiura, T., Otani, N., Murakami, T., Otobe, E., & Yoshimasu, T. (2014). 5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference (pp. 428-431). [6997884] (European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMIC.2014.6997884

5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. / Yang, Xin; Sugiura, Tsuyoshi; Otani, Norihisa et al.
European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 428-431 6997884 (European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, X, Sugiura, T, Otani, N, Murakami, T, Otobe, E & Yoshimasu, T 2014, 5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. in European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference., 6997884, European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 428-431, 9th European Microwave Integrated Circuits Conference, EuMIC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014, Rome, Italy, 14/10/6. https://doi.org/10.1109/EuMIC.2014.6997884

Yang X, Sugiura T, Otani N, Murakami T, Otobe E, Yoshimasu T. 5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. In European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 428-431. 6997884. (European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference). doi: 10.1109/EuMIC.2014.6997884

Yang, Xin ; Sugiura, Tsuyoshi ; Otani, Norihisa et al. / 5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 428-431 (European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference).

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title = "5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications",

abstract = "This paper presents a highly linear 5-GHz band power amplifier IC with integrated novel CMOS active bias circuit in SiGe BiCMOS technology for wireless LAN applications. The power amplifier IC consists of three-stage amplifier, the CMOS active bias circuit for linearizing SiGe HBT and all matching circuits. The power amplifier IC has exhibited a measured output power of 17.0 dBm, an EVM of 0.9 % and a dc current consumption of 284 mA under 54 Mbps OFDM signal at 5.4 GHz.",

keywords = "CMOS active bias circuit, Linear power amplifier, SiGe BiCMOS, WLAN",

author = "Xin Yang and Tsuyoshi Sugiura and Norihisa Otani and Tadamasa Murakami and Eiichiro Otobe and Toshihiko Yoshimasu",

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AU - Otobe, Eiichiro

AU - Yoshimasu, Toshihiko

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AB - This paper presents a highly linear 5-GHz band power amplifier IC with integrated novel CMOS active bias circuit in SiGe BiCMOS technology for wireless LAN applications. The power amplifier IC consists of three-stage amplifier, the CMOS active bias circuit for linearizing SiGe HBT and all matching circuits. The power amplifier IC has exhibited a measured output power of 17.0 dBm, an EVM of 0.9 % and a dc current consumption of 284 mA under 54 Mbps OFDM signal at 5.4 GHz.

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5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

Abstract

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Conference

Keywords

ASJC Scopus subject areas

Access to Document

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