5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

Xin Yang; Tsuyoshi Sugiura; Norihisa Otani; Tadamasa Murakami; Eiichiro Otobe; Toshihiko Yoshimasu

doi:10.1109/EuMC.2014.6986700

5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

Xin Yang, Tsuyoshi Sugiura, Norihisa Otani, Tadamasa Murakami, Eiichiro Otobe, Toshihiko Yoshimasu

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This paper presents a highly linear 5-GHz band power amplifier IC with integrated novel CMOS active bias circuit in SiGe BiCMOS technology for wireless LAN applications. The power amplifier IC consists of three-stage amplifier, the CMOS active bias circuit for linearizing SiGe HBT and all matching circuits. The power amplifier IC has exhibited a measured output power of 17.0 dBm, an EVM of 0.9 % and a dc current consumption of 284 mA under 54 Mbps OFDM signal at 5.4 GHz.

Original language	English
Title of host publication	European Microwave Week 2014
Subtitle of host publication	Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1372-1375
Number of pages	4
ISBN (Electronic)	9782874870354
DOIs	https://doi.org/10.1109/EuMC.2014.6986700
Publication status	Published - 2014 Dec 15
Event	2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, Italy Duration: 2014 Oct 6 → 2014 Oct 9

Publication series

Name	European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference

Other

Other	2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
Country/Territory	Italy
City	Rome
Period	14/10/6 → 14/10/9

Keywords

CMOS active bias circuit
Linear power amplifier
SiGe BiCMOS
WLAN

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/EuMC.2014.6986700

Cite this

Yang, X., Sugiura, T., Otani, N., Murakami, T., Otobe, E., & Yoshimasu, T. (2014). 5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. In European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference (pp. 1372-1375). Article 6986700 (European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMC.2014.6986700

5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. / Yang, Xin; Sugiura, Tsuyoshi; Otani, Norihisa et al.
European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1372-1375 6986700 (European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, X, Sugiura, T, Otani, N, Murakami, T, Otobe, E & Yoshimasu, T 2014, 5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. in European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference., 6986700, European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1372-1375, 2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014, Rome, Italy, 14/10/6. https://doi.org/10.1109/EuMC.2014.6986700

Yang X, Sugiura T, Otani N, Murakami T, Otobe E, Yoshimasu T. 5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. In European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1372-1375. 6986700. (European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference). doi: 10.1109/EuMC.2014.6986700

Yang, Xin ; Sugiura, Tsuyoshi ; Otani, Norihisa et al. / 5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 1372-1375 (European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference).

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title = "5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications",

abstract = "This paper presents a highly linear 5-GHz band power amplifier IC with integrated novel CMOS active bias circuit in SiGe BiCMOS technology for wireless LAN applications. The power amplifier IC consists of three-stage amplifier, the CMOS active bias circuit for linearizing SiGe HBT and all matching circuits. The power amplifier IC has exhibited a measured output power of 17.0 dBm, an EVM of 0.9 % and a dc current consumption of 284 mA under 54 Mbps OFDM signal at 5.4 GHz.",

keywords = "CMOS active bias circuit, Linear power amplifier, SiGe BiCMOS, WLAN",

author = "Xin Yang and Tsuyoshi Sugiura and Norihisa Otani and Tadamasa Murakami and Eiichiro Otobe and Toshihiko Yoshimasu",

note = "Publisher Copyright: {\textcopyright} 2014 European Microwave Association.; 2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 ; Conference date: 06-10-2014 Through 09-10-2014",

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AU - Otobe, Eiichiro

AU - Yoshimasu, Toshihiko

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5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

Abstract

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Keywords

ASJC Scopus subject areas

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