50-Gbit/s operation of lateral pin diode structure electro-absorption modulator integrated DFB laser

Koichi Hasebe, Tomonari Sato, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We developed an electro-absorption modulator integrated DFB laser using a lateral pin diode structure. Selective doping by thermal diffusion and ion implantation is essential for fabricating a monolithic integrated device. The device was modulated by 50-Gbit/s-NRZ signal with clear-eye opening.

Original languageEnglish
Title of host publicationEuropean Conference on Optical Communication, ECOC
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9782954944401
DOIs
Publication statusPublished - 2014 Nov 20
Externally publishedYes
Event2014 European Conference on Optical Communication, ECOC 2014 - Cannes, France
Duration: 2014 Sept 212014 Sept 25

Publication series

NameEuropean Conference on Optical Communication, ECOC

Other

Other2014 European Conference on Optical Communication, ECOC 2014
Country/TerritoryFrance
CityCannes
Period14/9/2114/9/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of '50-Gbit/s operation of lateral pin diode structure electro-absorption modulator integrated DFB laser'. Together they form a unique fingerprint.

Cite this