50-GHz-bandwidth Electro-absorption Modulator with Membrane InGaAsP Lateral p-i-n Diode on Si Platform

Tatsurou Hiraki; Takuma Aihara; Yoshiho Maeda; Takuro Fujii; Tai Tsuchizawa; Kiyoto Takahata; Takaaki Kakitsuka; Shinji Matsuo

doi:10.1109/ECOC48923.2020.9333206

50-GHz-bandwidth Electro-absorption Modulator with Membrane InGaAsP Lateral p-i-n Diode on Si Platform

Tatsurou Hiraki, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

A 300-μm-long membrane InGaAsP electro-absorption modulator (EAM) integrated on Si-waveguide circuits exhibits a 3-dB bandwidth of 50 GHz. The EAM shows high linearity, low loss (< 4 dB), and eye openings for 112-Gbit/s PAM4 signals at wavelengths from 1570 to 1600 nm.

Original language	English
Title of host publication	2020 European Conference on Optical Communications, ECOC 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728173610
DOIs	https://doi.org/10.1109/ECOC48923.2020.9333206
Publication status	Published - 2020 Dec
Event	46th European Conference on Optical Communications, ECOC 2020 - Virtual, Brussels, Belgium Duration: 2020 Dec 6 → 2020 Dec 10

Publication series

Name	2020 European Conference on Optical Communications, ECOC 2020

Conference

Conference	46th European Conference on Optical Communications, ECOC 2020
Country/Territory	Belgium
City	Virtual, Brussels
Period	20/12/6 → 20/12/10

ASJC Scopus subject areas

Computer Networks and Communications
Electronic, Optical and Magnetic Materials
Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/ECOC48923.2020.9333206

Cite this

Hiraki, T., Aihara, T., Maeda, Y., Fujii, T., Tsuchizawa, T., Takahata, K., Kakitsuka, T., & Matsuo, S. (2020). 50-GHz-bandwidth Electro-absorption Modulator with Membrane InGaAsP Lateral p-i-n Diode on Si Platform. In 2020 European Conference on Optical Communications, ECOC 2020 [9333206] (2020 European Conference on Optical Communications, ECOC 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECOC48923.2020.9333206

50-GHz-bandwidth Electro-absorption Modulator with Membrane InGaAsP Lateral p-i-n Diode on Si Platform. / Hiraki, Tatsurou; Aihara, Takuma; Maeda, Yoshiho et al.
2020 European Conference on Optical Communications, ECOC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 9333206 (2020 European Conference on Optical Communications, ECOC 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hiraki, T, Aihara, T, Maeda, Y, Fujii, T, Tsuchizawa, T, Takahata, K , Kakitsuka, T & Matsuo, S 2020, 50-GHz-bandwidth Electro-absorption Modulator with Membrane InGaAsP Lateral p-i-n Diode on Si Platform. in 2020 European Conference on Optical Communications, ECOC 2020., 9333206, 2020 European Conference on Optical Communications, ECOC 2020, Institute of Electrical and Electronics Engineers Inc., 46th European Conference on Optical Communications, ECOC 2020, Virtual, Brussels, Belgium, 20/12/6. https://doi.org/10.1109/ECOC48923.2020.9333206

Hiraki T, Aihara T, Maeda Y, Fujii T, Tsuchizawa T, Takahata K et al. 50-GHz-bandwidth Electro-absorption Modulator with Membrane InGaAsP Lateral p-i-n Diode on Si Platform. In 2020 European Conference on Optical Communications, ECOC 2020. Institute of Electrical and Electronics Engineers Inc. 2020. 9333206. (2020 European Conference on Optical Communications, ECOC 2020). doi: 10.1109/ECOC48923.2020.9333206

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abstract = "A 300-μm-long membrane InGaAsP electro-absorption modulator (EAM) integrated on Si-waveguide circuits exhibits a 3-dB bandwidth of 50 GHz. The EAM shows high linearity, low loss (< 4 dB), and eye openings for 112-Gbit/s PAM4 signals at wavelengths from 1570 to 1600 nm.",

author = "Tatsurou Hiraki and Takuma Aihara and Yoshiho Maeda and Takuro Fujii and Tai Tsuchizawa and Kiyoto Takahata and Takaaki Kakitsuka and Shinji Matsuo",

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AU - Fujii, Takuro

AU - Tsuchizawa, Tai

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50-GHz-bandwidth Electro-absorption Modulator with Membrane InGaAsP Lateral p-i-n Diode on Si Platform

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