50-GHz-Bandwidth Membrane InGaAsP Electro-Absorption Modulator on Si Platform

Tatsurou Hiraki*, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We fabricate a membrane InP-based electro-absorption modulator (EAM), in which an InGaAsP-based multiple-quantum-well (MQW) absorption region is buried with an InP layer, on Si-waveguide circuits. By optical coupling between the MQW absorption region and Si core, a low-loss and large-absorption-length (300-μm-long) supermode waveguide is designed to suppress electric-field screening at high optical input power. The EAM is fabricated by combining direct bonding of the MQW layer and regrowth of the InP layer on a thin InP template bonded on a silicon-on-insulator wafer. The fabricated membrane EAM shows an on-chip loss of less than 4 dB at wavelengths over 1590 nm and temperatures from 25 to 50 °C. Since the membrane lateral p-i-n diode structure is beneficial for reducing the RC time constant of a lumped-electrode InP-based EAM, the EO bandwidth of the EAM is around 50 GHz without a 50-ohm termination up to fiber-input power of 10 dBm. Using the device, we demonstrate clear eye openings for 56-Gbit/s NRZ and 112-Gbit/s PAM4 signals at temperatures from 25 to 50 °C.

Original languageEnglish
Article number9439152
Pages (from-to)5300-5306
Number of pages7
JournalJournal of Lightwave Technology
Issue number16
Publication statusPublished - 2021 Aug 15


  • Electrooptic modulators
  • optoelectronic devices
  • silicon photonics

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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