5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit

Shihai He; Yorikatsu Uchida; Xin Yang; Qing Liu; Toshihiko Yoshimasu

doi:10.1109/ICMMT.2012.6230444

5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit

Shihai He^*, Yorikatsu Uchida, Xin Yang, Qing Liu, Toshihiko Yoshimasu

^*Corresponding author for this work

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

In this paper, a 5.25GHz linear CMOS power amplifier (PA) with an integrated diode is presented. The proposed technique improves the linearity of the power amplifier by a diode-connected NMOS transistor. The NMOS diode is effective to suppress both the AM-AM distortion and AM-PM distortion. To verify this concept, the power amplifier is simulated with TSMC 0.13-μm CMOS process. With a power supply of 3.3 V, the proposed power amplifier exhibits a maximum IMD improvement of 25 dB with a PAE of 38.2 % at an output P1dB of 19.6 dBm.

Original language	English
Title of host publication	2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
Pages	1912-1915
Number of pages	4
DOIs	https://doi.org/10.1109/ICMMT.2012.6230444
Publication status	Published - 2012
Event	2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Shenzhen, China Duration: 2012 May 5 → 2012 May 8

Publication series

Name	2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
Volume	5

Conference

Conference	2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012
Country/Territory	China
City	Shenzhen
Period	12/5/5 → 12/5/8

Keywords

CMOS power amplifier
Integrated Diode
adaptive bias
intermodulation distortion

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICMMT.2012.6230444

Cite this

He, S., Uchida, Y., Yang, X., Liu, Q., & Yoshimasu, T. (2012). 5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit. In 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings (pp. 1912-1915). Article 6230444 (2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings; Vol. 5). https://doi.org/10.1109/ICMMT.2012.6230444

5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit. / He, Shihai; Uchida, Yorikatsu; Yang, Xin et al.
2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings. 2012. p. 1912-1915 6230444 (2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings; Vol. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

He, S, Uchida, Y, Yang, X, Liu, Q & Yoshimasu, T 2012, 5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit. in 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings., 6230444, 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings, vol. 5, pp. 1912-1915, 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012, Shenzhen, China, 12/5/5. https://doi.org/10.1109/ICMMT.2012.6230444

He S, Uchida Y, Yang X, Liu Q, Yoshimasu T. 5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit. In 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings. 2012. p. 1912-1915. 6230444. (2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings). doi: 10.1109/ICMMT.2012.6230444

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abstract = "In this paper, a 5.25GHz linear CMOS power amplifier (PA) with an integrated diode is presented. The proposed technique improves the linearity of the power amplifier by a diode-connected NMOS transistor. The NMOS diode is effective to suppress both the AM-AM distortion and AM-PM distortion. To verify this concept, the power amplifier is simulated with TSMC 0.13-μm CMOS process. With a power supply of 3.3 V, the proposed power amplifier exhibits a maximum IMD improvement of 25 dB with a PAE of 38.2 % at an output P1dB of 19.6 dBm.",

keywords = "CMOS power amplifier, Integrated Diode, adaptive bias, intermodulation distortion",

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AU - He, Shihai

AU - Uchida, Yorikatsu

AU - Yang, Xin

AU - Liu, Qing

AU - Yoshimasu, Toshihiko

PY - 2012

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N2 - In this paper, a 5.25GHz linear CMOS power amplifier (PA) with an integrated diode is presented. The proposed technique improves the linearity of the power amplifier by a diode-connected NMOS transistor. The NMOS diode is effective to suppress both the AM-AM distortion and AM-PM distortion. To verify this concept, the power amplifier is simulated with TSMC 0.13-μm CMOS process. With a power supply of 3.3 V, the proposed power amplifier exhibits a maximum IMD improvement of 25 dB with a PAE of 38.2 % at an output P1dB of 19.6 dBm.

AB - In this paper, a 5.25GHz linear CMOS power amplifier (PA) with an integrated diode is presented. The proposed technique improves the linearity of the power amplifier by a diode-connected NMOS transistor. The NMOS diode is effective to suppress both the AM-AM distortion and AM-PM distortion. To verify this concept, the power amplifier is simulated with TSMC 0.13-μm CMOS process. With a power supply of 3.3 V, the proposed power amplifier exhibits a maximum IMD improvement of 25 dB with a PAE of 38.2 % at an output P1dB of 19.6 dBm.

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KW - intermodulation distortion

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5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit

Abstract

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Keywords

ASJC Scopus subject areas

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