580 v Breakdown Voltage in Vertical Diamond Trench MOSFETs with a P--Drift Layer

Jun Tsunoda; Naoya Niikura; Kosuke Ota; Aoi Morishita; Atsushi Hiraiwa; Hiroshi Kawarada

doi:10.1109/LED.2021.3131038

580 v Breakdown Voltage in Vertical Diamond Trench MOSFETs with a P^--Drift Layer

Jun Tsunoda^*, Naoya Niikura, Kosuke Ota, Aoi Morishita, Atsushi Hiraiwa, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This letter reports the successful demonstration of large-current and high-voltage (001) vertical-type two-dimensional hole gas (2DHG) diamond trench metal-oxide-semiconductor field-effect transistors (MOSFETs) with a p-drift layer. The fabricated transistor demonstrated a maximum drain current density of 210 mA/mm, a field-effect-mobility of 61 cm2V-1s-1, and a specific on-resistance of 23 mOmega cm2. Moreover, a high breakdown voltage of 580 V with a gate-drain length of 10 mu\text m was obtained, which is the highest value reported for a vertical-type diamond MOSFET to date. These characteristics indicate that a vertical-type diamond MOSFET using a p-drift layer may be used to realize a p-channel power device with a high breakdown voltage and low on-resistance.

Original language	English
Pages (from-to)	88-91
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	43
Issue number	1
DOIs	https://doi.org/10.1109/LED.2021.3131038
Publication status	Published - 2022 Jan 1

Keywords

Diamond
High breakdown voltage
P-drift layer
Power mosfet
Vertical-type

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2021.3131038

Cite this

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title = "580 v Breakdown Voltage in Vertical Diamond Trench MOSFETs with a P--Drift Layer",

abstract = "This letter reports the successful demonstration of large-current and high-voltage (001) vertical-type two-dimensional hole gas (2DHG) diamond trench metal-oxide-semiconductor field-effect transistors (MOSFETs) with a p-drift layer. The fabricated transistor demonstrated a maximum drain current density of 210 mA/mm, a field-effect-mobility of 61 cm2V-1s-1, and a specific on-resistance of 23 mOmega cm2. Moreover, a high breakdown voltage of 580 V with a gate-drain length of 10 mu\text m was obtained, which is the highest value reported for a vertical-type diamond MOSFET to date. These characteristics indicate that a vertical-type diamond MOSFET using a p-drift layer may be used to realize a p-channel power device with a high breakdown voltage and low on-resistance.",

keywords = "Diamond, High breakdown voltage, P-drift layer, Power mosfet, Vertical-type",

author = "Jun Tsunoda and Naoya Niikura and Kosuke Ota and Aoi Morishita and Atsushi Hiraiwa and Hiroshi Kawarada",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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doi = "10.1109/LED.2021.3131038",

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T1 - 580 v Breakdown Voltage in Vertical Diamond Trench MOSFETs with a P--Drift Layer

AU - Tsunoda, Jun

AU - Niikura, Naoya

AU - Ota, Kosuke

AU - Morishita, Aoi

AU - Hiraiwa, Atsushi

AU - Kawarada, Hiroshi

PY - 2022/1/1

Y1 - 2022/1/1

N2 - This letter reports the successful demonstration of large-current and high-voltage (001) vertical-type two-dimensional hole gas (2DHG) diamond trench metal-oxide-semiconductor field-effect transistors (MOSFETs) with a p-drift layer. The fabricated transistor demonstrated a maximum drain current density of 210 mA/mm, a field-effect-mobility of 61 cm2V-1s-1, and a specific on-resistance of 23 mOmega cm2. Moreover, a high breakdown voltage of 580 V with a gate-drain length of 10 mu\text m was obtained, which is the highest value reported for a vertical-type diamond MOSFET to date. These characteristics indicate that a vertical-type diamond MOSFET using a p-drift layer may be used to realize a p-channel power device with a high breakdown voltage and low on-resistance.

AB - This letter reports the successful demonstration of large-current and high-voltage (001) vertical-type two-dimensional hole gas (2DHG) diamond trench metal-oxide-semiconductor field-effect transistors (MOSFETs) with a p-drift layer. The fabricated transistor demonstrated a maximum drain current density of 210 mA/mm, a field-effect-mobility of 61 cm2V-1s-1, and a specific on-resistance of 23 mOmega cm2. Moreover, a high breakdown voltage of 580 V with a gate-drain length of 10 mu\text m was obtained, which is the highest value reported for a vertical-type diamond MOSFET to date. These characteristics indicate that a vertical-type diamond MOSFET using a p-drift layer may be used to realize a p-channel power device with a high breakdown voltage and low on-resistance.

KW - Diamond

KW - High breakdown voltage

KW - P-drift layer

KW - Power mosfet

KW - Vertical-type

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