780nm AlGaAs high-power lasers and their reliable operation

S. Yamashita; S. Nakatsuka; K. Uchida; Toshihiro Kawano; T. Kajimura

doi:10.1109/ISLC.1990.764525

780nm AlGaAs high-power lasers and their reliable operation

S. Yamashita, S. Nakatsuka, K. Uchida, Toshihiro Kawano, T. Kajimura

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Article number	764525
Pages (from-to)	278-279
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
DOIs	https://doi.org/10.1109/ISLC.1990.764525
Publication status	Published - 1990 Jan 1
Externally published	Yes
Event	12th IEEE International Conference on Semiconductor Laser, ISLC 1990 - Davos, Switzerland Duration: 1990 Sept 9 → 1990 Sept 14

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/ISLC.1990.764525

Cite this

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title = "780nm AlGaAs high-power lasers and their reliable operation",

author = "S. Yamashita and S. Nakatsuka and K. Uchida and Toshihiro Kawano and T. Kajimura",

year = "1990",

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journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

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T1 - 780nm AlGaAs high-power lasers and their reliable operation

AU - Yamashita, S.

AU - Nakatsuka, S.

AU - Uchida, K.

AU - Kawano, Toshihiro

AU - Kajimura, T.

PY - 1990/1/1

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M3 - Conference article

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SP - 278

EP - 279

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

M1 - 764525

T2 - 12th IEEE International Conference on Semiconductor Laser, ISLC 1990

Y2 - 9 September 1990 through 14 September 1990

ER -

780nm AlGaAs high-power lasers and their reliable operation

ASJC Scopus subject areas

Access to Document

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