@inproceedings{8d8f84aa1f6a4f8da3591ff7355ec401,
title = "79 GHz CMOS power amplifier considering time- and temperature-degradation model",
abstract = "This paper reports a CMOS power amplifier (PA) designed considering the performance degradation of MOSFETs caused by both temperature variations and the hot-carrier effect. A small-signal MOSFET model that reproduces the transient degradation caused by the hot-carrier effect is proposed. A 79 GHz CMOS PA was designed utilizing the proposed small-signal model. Simulation results agreed well with the measurement results of the PA fabricated with a 40 nm CMOS technology. It achieved the small-signal gain variations of below 0.7 dB and the OP1dB degradation of less than 0.8 dB in the temperature range of 0°C to 100°C.",
keywords = "Hot-carrier effect, Millimeter-wave, Power amplifier, Small-signal model, Temperature compensation",
author = "Takeshi Yoshida and Kyoya Takano and Li, {Chen Yang} and Kosuke Katayama and Shuhei Amakawa and Minoru Fujishima",
note = "Publisher Copyright: Copyright 2014 IEICE.; 2014 Asia-Pacific Microwave Conference, APMC 2014 ; Conference date: 04-11-2014 Through 07-11-2014",
year = "2014",
month = mar,
day = "25",
language = "English",
series = "2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "637--639",
booktitle = "2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014",
}