80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS

Xin Yang; Xiao Xu; Takayuki Shibata; Toshihiko Yoshimasu

doi:10.1017/S1759078716000337

80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS

Xin Yang, Xiao Xu, Takayuki Shibata, Toshihiko Yoshimasu^*

^*Corresponding author for this work

Graduate School of Information, Production and Systems

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only -7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.

Original language	English
Pages (from-to)	703-712
Number of pages	10
Journal	International Journal of Microwave and Wireless Technologies
Volume	8
Issue number	4-5
DOIs	https://doi.org/10.1017/S1759078716000337
Publication status	Published - 2016 Jun 1

Keywords

130-nm SiGe BiCMOS
Bottom-LO-configuratoin
CECCTP
Low power
Marchand Balun
Sub-harmonic mixer
W-band

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1017/S1759078716000337

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title = "80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS",

abstract = "In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only -7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.",

keywords = "130-nm SiGe BiCMOS, Bottom-LO-configuratoin, CECCTP, Low power, Marchand Balun, Sub-harmonic mixer, W-band",

author = "Xin Yang and Xiao Xu and Takayuki Shibata and Toshihiko Yoshimasu",

note = "Publisher Copyright: {\textcopyright} Cambridge University Press and the European Microwave Association 2016.",

year = "2016",

month = jun,

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doi = "10.1017/S1759078716000337",

language = "English",

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journal = "International Journal of Microwave and Wireless Technologies",

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T1 - 80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS

AU - Yang, Xin

AU - Xu, Xiao

AU - Shibata, Takayuki

AU - Yoshimasu, Toshihiko

N1 - Publisher Copyright: © Cambridge University Press and the European Microwave Association 2016.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only -7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.

AB - In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only -7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.

KW - 130-nm SiGe BiCMOS

KW - Bottom-LO-configuratoin

KW - CECCTP

KW - Low power

KW - Marchand Balun

KW - Sub-harmonic mixer

KW - W-band

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DO - 10.1017/S1759078716000337

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SN - 1759-0787

VL - 8

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EP - 712

JO - International Journal of Microwave and Wireless Technologies

JF - International Journal of Microwave and Wireless Technologies

IS - 4-5

ER -

80-GHz-band low-power sub-harmonic mixer IC with a bottom-LO-configuration in 130-nm SiGe BiCMOS

Abstract

Keywords

ASJC Scopus subject areas

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