TY - GEN
T1 - A 0.186-pJ per Bit Latch-Based True Random Number Generator with Mismatch Compensation and Random Noise Enhancement
AU - Zhang, Ruilin
AU - Wang, Xingyu
AU - Wang, Luying
AU - Chen, Xinpeng
AU - Yang, Fan
AU - Liu, Kunyang
AU - Shinohara, Hirofumi
N1 - Funding Information:
This research is supported by ROHM Co., Ltd.
Publisher Copyright:
© 2021 JSAP.
PY - 2021/6/13
Y1 - 2021/6/13
N2 - A calibration and feedback control-free latch-based true random-number generator (TRNG) is presented. It features a mismatch self-compensation and a random noise enhancement technique to drastically improve the noise-to-mismatch ratio. By employing the XOR function of only 4-bit entropy sources, the proposed TRNG can efficiently operate across a wide voltage (0.3∼1.0 V) and temperature (-20∼100°C) range. An 8-bit von Neumann with waiting (VN8W) post-processing technique is used to extract full entropy bitstreams, which have been verified by the NIST-SP 800-22 randomness tests. Robustness against supply noise injection attack is also demonstrated. The proposed TRNG is fabricated in 130-nm CMOS technology and achieves the state-of-the-art energy of 0.186 pJ/bit at 0.3 V with a core area of 661 um2 (0.039 MF2).
AB - A calibration and feedback control-free latch-based true random-number generator (TRNG) is presented. It features a mismatch self-compensation and a random noise enhancement technique to drastically improve the noise-to-mismatch ratio. By employing the XOR function of only 4-bit entropy sources, the proposed TRNG can efficiently operate across a wide voltage (0.3∼1.0 V) and temperature (-20∼100°C) range. An 8-bit von Neumann with waiting (VN8W) post-processing technique is used to extract full entropy bitstreams, which have been verified by the NIST-SP 800-22 randomness tests. Robustness against supply noise injection attack is also demonstrated. The proposed TRNG is fabricated in 130-nm CMOS technology and achieves the state-of-the-art energy of 0.186 pJ/bit at 0.3 V with a core area of 661 um2 (0.039 MF2).
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U2 - 10.23919/VLSICircuits52068.2021.9492474
DO - 10.23919/VLSICircuits52068.2021.9492474
M3 - Conference contribution
AN - SCOPUS:85111894211
T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers
BT - 2021 Symposium on VLSI Circuits, VLSI Circuits 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 35th Symposium on VLSI Circuits, VLSI Circuits 2021
Y2 - 13 June 2021 through 19 June 2021
ER -