A 2-GHz-band low-phase-noise VCO IC with an LC bias circuit in 180-nm CMOS

Xiao Xu; Xin Yang; Toshihiko Yoshimasu

doi:10.1109/EuMIC.2016.7777524

A 2-GHz-band low-phase-noise VCO IC with an LC bias circuit in 180-nm CMOS

Xiao Xu, Xin Yang, Toshihiko Yoshimasu

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

A novel LC bias topology is proposed to improve the phase noise of VCO IC for ultra-low-voltage applications. The LC bias circuit works as an impedance transformation network, which improves the phase noise of VCO by delivering higher power to the gates of the cross-coupled transistors. A 2-GHz-band ultra-low-voltage VCO IC with the novel LC bias circuit has been designed, fabricated and fully evaluated in 180-nm CMOS technology. The fabricated novel VCO IC has exhibited a measured phase noise of -126.4 dBc/Hz at 1 MHz offset frequency from the 2.03 GHz carrier frequency with a supply voltage of 0.5 V.

Original language	English
Title of host publication	EuMIC 2016 - 11th European Microwave Integrated Circuits Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	197-200
Number of pages	4
ISBN (Electronic)	9782874870446
DOIs	https://doi.org/10.1109/EuMIC.2016.7777524
Publication status	Published - 2016 Dec 7
Event	11th European Microwave Integrated Circuits Conference, EuMIC 2016 - London, United Kingdom Duration: 2016 Oct 3 → 2016 Oct 4

Publication series

Name	EuMIC 2016 - 11th European Microwave Integrated Circuits Conference

Other

Other	11th European Microwave Integrated Circuits Conference, EuMIC 2016
Country/Territory	United Kingdom
City	London
Period	16/10/3 → 16/10/4

Keywords

180-nm CMOS
2-GHz-band
LC bias circuit
VCO
low phase noise
ultra-low-voltage

ASJC Scopus subject areas

Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/EuMIC.2016.7777524

Cite this

Xu, X., Yang, X., & Yoshimasu, T. (2016). A 2-GHz-band low-phase-noise VCO IC with an LC bias circuit in 180-nm CMOS. In EuMIC 2016 - 11th European Microwave Integrated Circuits Conference (pp. 197-200). [7777524] (EuMIC 2016 - 11th European Microwave Integrated Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMIC.2016.7777524

A 2-GHz-band low-phase-noise VCO IC with an LC bias circuit in 180-nm CMOS. / Xu, Xiao; Yang, Xin; Yoshimasu, Toshihiko.
EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2016. p. 197-200 7777524 (EuMIC 2016 - 11th European Microwave Integrated Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Xu, X, Yang, X & Yoshimasu, T 2016, A 2-GHz-band low-phase-noise VCO IC with an LC bias circuit in 180-nm CMOS. in EuMIC 2016 - 11th European Microwave Integrated Circuits Conference., 7777524, EuMIC 2016 - 11th European Microwave Integrated Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 197-200, 11th European Microwave Integrated Circuits Conference, EuMIC 2016, London, United Kingdom, 16/10/3. https://doi.org/10.1109/EuMIC.2016.7777524

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title = "A 2-GHz-band low-phase-noise VCO IC with an LC bias circuit in 180-nm CMOS",

abstract = "A novel LC bias topology is proposed to improve the phase noise of VCO IC for ultra-low-voltage applications. The LC bias circuit works as an impedance transformation network, which improves the phase noise of VCO by delivering higher power to the gates of the cross-coupled transistors. A 2-GHz-band ultra-low-voltage VCO IC with the novel LC bias circuit has been designed, fabricated and fully evaluated in 180-nm CMOS technology. The fabricated novel VCO IC has exhibited a measured phase noise of -126.4 dBc/Hz at 1 MHz offset frequency from the 2.03 GHz carrier frequency with a supply voltage of 0.5 V.",

keywords = "180-nm CMOS, 2-GHz-band, LC bias circuit, VCO, low phase noise, ultra-low-voltage",

author = "Xiao Xu and Xin Yang and Toshihiko Yoshimasu",

note = "Publisher Copyright: {\textcopyright} 2016 European Microwave Association. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 11th European Microwave Integrated Circuits Conference, EuMIC 2016 ; Conference date: 03-10-2016 Through 04-10-2016",

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N2 - A novel LC bias topology is proposed to improve the phase noise of VCO IC for ultra-low-voltage applications. The LC bias circuit works as an impedance transformation network, which improves the phase noise of VCO by delivering higher power to the gates of the cross-coupled transistors. A 2-GHz-band ultra-low-voltage VCO IC with the novel LC bias circuit has been designed, fabricated and fully evaluated in 180-nm CMOS technology. The fabricated novel VCO IC has exhibited a measured phase noise of -126.4 dBc/Hz at 1 MHz offset frequency from the 2.03 GHz carrier frequency with a supply voltage of 0.5 V.

AB - A novel LC bias topology is proposed to improve the phase noise of VCO IC for ultra-low-voltage applications. The LC bias circuit works as an impedance transformation network, which improves the phase noise of VCO by delivering higher power to the gates of the cross-coupled transistors. A 2-GHz-band ultra-low-voltage VCO IC with the novel LC bias circuit has been designed, fabricated and fully evaluated in 180-nm CMOS technology. The fabricated novel VCO IC has exhibited a measured phase noise of -126.4 dBc/Hz at 1 MHz offset frequency from the 2.03 GHz carrier frequency with a supply voltage of 0.5 V.

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A 2-GHz-band low-phase-noise VCO IC with an LC bias circuit in 180-nm CMOS

Abstract

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Keywords

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