A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS

Cuilin Chen; Xiao Xu; Xin Yang; Tsuyoshi Sugiura; Toshihiko Yoshimasu

doi:10.1109/SIRF.2017.7874379

A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS

Cuilin Chen, Xiao Xu, Xin Yang, Tsuyoshi Sugiura, Toshihiko Yoshimasu

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

A high efficiency broadband power amplifier IC is proposed for wireless communication systems. The power amplifier IC integrates an adaptive bias circuit which can adjust the collector current of SiGe HBT under large signal operation to improve the efficiency and temperature performance. The power amplifier IC is designed, fabricated and fully measured in 130-nm SiGe BiCMOS. The fabricated power amplifier IC has exhibited an output power of 14.6 dBm with a PAE of 43.8 % at a supply voltage of 1.4 V at 26 GHz. In addition, the power amplifier IC has an output power of over 12 dBm with a PAE of over 31.1 % from 20 to 30 GHz.

Original language	English
Title of host publication	SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	88-90
Number of pages	3
ISBN (Electronic)	9781509052363
DOIs	https://doi.org/10.1109/SIRF.2017.7874379
Publication status	Published - 2017 Mar 8
Event	17th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2017 - Phoenix, United States Duration: 2017 Jan 15 → 2017 Jan 18

Publication series

Name	SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Other

Other	17th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2017
Country/Territory	United States
City	Phoenix
Period	17/1/15 → 17/1/18

Keywords

SiGe BiCMOS technology
adaptive bias circuit
broadband power amplifier

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Computer Networks and Communications

Access to Document

10.1109/SIRF.2017.7874379

Cite this

Chen, C., Xu, X., Yang, X., Sugiura, T., & Yoshimasu, T. (2017). A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS. In SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 88-90). [7874379] (SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIRF.2017.7874379

A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS. / Chen, Cuilin; Xu, Xiao; Yang, Xin et al.
SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Institute of Electrical and Electronics Engineers Inc., 2017. p. 88-90 7874379 (SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, C, Xu, X, Yang, X, Sugiura, T & Yoshimasu, T 2017, A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS. in SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems., 7874379, SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Institute of Electrical and Electronics Engineers Inc., pp. 88-90, 17th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2017, Phoenix, United States, 17/1/15. https://doi.org/10.1109/SIRF.2017.7874379

Chen C, Xu X, Yang X, Sugiura T, Yoshimasu T. A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS. In SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Institute of Electrical and Electronics Engineers Inc. 2017. p. 88-90. 7874379. (SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems). doi: 10.1109/SIRF.2017.7874379

Chen, Cuilin ; Xu, Xiao ; Yang, Xin et al. / A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS. SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 88-90 (SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems).

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abstract = "A high efficiency broadband power amplifier IC is proposed for wireless communication systems. The power amplifier IC integrates an adaptive bias circuit which can adjust the collector current of SiGe HBT under large signal operation to improve the efficiency and temperature performance. The power amplifier IC is designed, fabricated and fully measured in 130-nm SiGe BiCMOS. The fabricated power amplifier IC has exhibited an output power of 14.6 dBm with a PAE of 43.8 % at a supply voltage of 1.4 V at 26 GHz. In addition, the power amplifier IC has an output power of over 12 dBm with a PAE of over 31.1 % from 20 to 30 GHz.",

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author = "Cuilin Chen and Xiao Xu and Xin Yang and Tsuyoshi Sugiura and Toshihiko Yoshimasu",

note = "Funding Information: Acknowledgements. We wish to thank Dr. H. Cailla (Centre d{\textquoteright}lm-munologie de Marseille-Luminy) for her help with the radioimmu-nological quantification of (2{\textquoteright}-5{\textquoteright})(A),, oligonucleotides. We are deeply indebted to Prof. G.B. Rossi for fruitful discussions and to Dr. L. Hare1 for providing us with an FLC subline. Secretarial assistance has been provided by I. Olivier. This work has been supported by grants from the CNRS, ARC and Ligue Nationale de Lutte contre de Cancer to B. Lebleu, and from the Consiglio Nasionale delle Riceretie Progetto Bilaterale Italie-Francia (84-01712-04) to G.B. Rossi. Publisher Copyright: {\textcopyright} 2017 IEEE.; 17th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2017 ; Conference date: 15-01-2017 Through 18-01-2017",

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N1 - Funding Information: Acknowledgements. We wish to thank Dr. H. Cailla (Centre d’lm-munologie de Marseille-Luminy) for her help with the radioimmu-nological quantification of (2’-5’)(A),, oligonucleotides. We are deeply indebted to Prof. G.B. Rossi for fruitful discussions and to Dr. L. Hare1 for providing us with an FLC subline. Secretarial assistance has been provided by I. Olivier. This work has been supported by grants from the CNRS, ARC and Ligue Nationale de Lutte contre de Cancer to B. Lebleu, and from the Consiglio Nasionale delle Riceretie Progetto Bilaterale Italie-Francia (84-01712-04) to G.B. Rossi. Publisher Copyright: © 2017 IEEE.

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A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS

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Keywords

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