TY - GEN
T1 - A 2.5-GHz 1-V high efficiency CMOS Class-E amplifier IC using back-gate voltage injection
AU - Kurniawan, Taufiq Alif
AU - Yang, Xin
AU - Sun, Zheng
AU - Xu, Xiao
AU - Yoshimasu, Toshihiko
N1 - Publisher Copyright:
Copyright 2014 IEICE.
Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 2014/3/25
Y1 - 2014/3/25
N2 - In this paper, a fully integrated Class-E amplifier IC using back-gate voltage injection is designed, fabricated and fully evaluated in 0.18-μm CMOS technology. The body effect allows to achieve high efficiency under low supply voltage by efficiently controlling threshold voltage and on-resistance of switching transistor, simultaneously. The proposed amplifier IC has exhibited an output power of 11.0 dBm and a PAE of 30.5 % at 1-V supply voltage for 2.5 GHz applications.
AB - In this paper, a fully integrated Class-E amplifier IC using back-gate voltage injection is designed, fabricated and fully evaluated in 0.18-μm CMOS technology. The body effect allows to achieve high efficiency under low supply voltage by efficiently controlling threshold voltage and on-resistance of switching transistor, simultaneously. The proposed amplifier IC has exhibited an output power of 11.0 dBm and a PAE of 30.5 % at 1-V supply voltage for 2.5 GHz applications.
KW - Back-gate voltage
KW - Class-E amplifier
KW - High efficiency
KW - Low supply voltage
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M3 - Conference contribution
AN - SCOPUS:84988293831
T3 - 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
SP - 744
EP - 746
BT - 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 Asia-Pacific Microwave Conference, APMC 2014
Y2 - 4 November 2014 through 7 November 2014
ER -