A 26-GHz-band high back-off efficiency stacked-FET power amplifier IC with adaptively controlled bias and load circuits in 45-nm CMOS SOI

Toshihiko Yoshimasu*, Mengchu Fang, Tsuyoshi Sugiura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

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