A 26-GHz-band high back-off efficiency stacked-FET power amplifier IC with adaptively controlled bias and load circuits in 45-nm CMOS SOI

Toshihiko Yoshimasu*, Mengchu Fang, Tsuyoshi Sugiura

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

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