A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI

Mengchu Fang; Tsuyoshi Sugiura; Toshihiko Yoshimasu

doi:10.1109/IWS49314.2020.9360109

A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI

Mengchu Fang, Tsuyoshi Sugiura, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents a 28-GHz-band high efficiency linear power amplifier in 56-nm CMOS SOI for 5G mobile communication systems. A novel adaptive bias circuit is proposed to attain high linearity and efficiency simultaneously. In addition, a source degeneration inductor is utilized to improve the gain linearity of the power amplifier. It is expected that the power amplifier exhibits a P1dB of 20 dBm with a linear power gain of 13.2 dB and a peak PAE of 41.4% at a supply voltage of 3.6 V.

Original language	English
Title of host publication	2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728167039
DOIs	https://doi.org/10.1109/IWS49314.2020.9360109
Publication status	Published - 2020 Sept 20
Event	2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Virtual, Shanghai, China Duration: 2020 Sept 20 → 2020 Sept 23

Publication series

Name	2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings

Conference

Conference	2020 IEEE MTT-S International Wireless Symposium, IWS 2020
Country/Territory	China
City	Virtual, Shanghai
Period	20/9/20 → 20/9/23

Keywords

CMOS SOI
adaptive bias
high efficiency
high linearity
power amplifier

ASJC Scopus subject areas

Computer Networks and Communications
Signal Processing
Instrumentation

Access to Document

10.1109/IWS49314.2020.9360109

Cite this

Fang, M., Sugiura, T., & Yoshimasu, T. (2020). A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI. In 2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings [9360109] (2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWS49314.2020.9360109

A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI. / Fang, Mengchu; Sugiura, Tsuyoshi; Yoshimasu, Toshihiko.
2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9360109 (2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fang, M, Sugiura, T & Yoshimasu, T 2020, A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI. in 2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings., 9360109, 2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE MTT-S International Wireless Symposium, IWS 2020, Virtual, Shanghai, China, 20/9/20. https://doi.org/10.1109/IWS49314.2020.9360109

Fang M, Sugiura T, Yoshimasu T. A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI. In 2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9360109. (2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings). doi: 10.1109/IWS49314.2020.9360109

Fang, Mengchu ; Sugiura, Tsuyoshi ; Yoshimasu, Toshihiko. / A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI. 2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. (2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings).

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title = "A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI",

abstract = "This paper presents a 28-GHz-band high efficiency linear power amplifier in 56-nm CMOS SOI for 5G mobile communication systems. A novel adaptive bias circuit is proposed to attain high linearity and efficiency simultaneously. In addition, a source degeneration inductor is utilized to improve the gain linearity of the power amplifier. It is expected that the power amplifier exhibits a P1dB of 20 dBm with a linear power gain of 13.2 dB and a peak PAE of 41.4% at a supply voltage of 3.6 V.",

keywords = "CMOS SOI, adaptive bias, high efficiency, high linearity, power amplifier",

author = "Mengchu Fang and Tsuyoshi Sugiura and Toshihiko Yoshimasu",

note = "Funding Information: ACKNOWLEDGMENT The authors would like to thank GLOBALFOUNDRIES for continuous support. This work is supported by VLSI Design and Education Center (VDEC), University of Tokyo in collaboration with Cadence Design Systems, Inc., Menter Graphics, Inc., and Keysight Technologies Japan, Ltd. Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE MTT-S International Wireless Symposium, IWS 2020 ; Conference date: 20-09-2020 Through 23-09-2020",

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N1 - Funding Information: ACKNOWLEDGMENT The authors would like to thank GLOBALFOUNDRIES for continuous support. This work is supported by VLSI Design and Education Center (VDEC), University of Tokyo in collaboration with Cadence Design Systems, Inc., Menter Graphics, Inc., and Keysight Technologies Japan, Ltd. Publisher Copyright: © 2020 IEEE.

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N2 - This paper presents a 28-GHz-band high efficiency linear power amplifier in 56-nm CMOS SOI for 5G mobile communication systems. A novel adaptive bias circuit is proposed to attain high linearity and efficiency simultaneously. In addition, a source degeneration inductor is utilized to improve the gain linearity of the power amplifier. It is expected that the power amplifier exhibits a P1dB of 20 dBm with a linear power gain of 13.2 dB and a peak PAE of 41.4% at a supply voltage of 3.6 V.

AB - This paper presents a 28-GHz-band high efficiency linear power amplifier in 56-nm CMOS SOI for 5G mobile communication systems. A novel adaptive bias circuit is proposed to attain high linearity and efficiency simultaneously. In addition, a source degeneration inductor is utilized to improve the gain linearity of the power amplifier. It is expected that the power amplifier exhibits a P1dB of 20 dBm with a linear power gain of 13.2 dB and a peak PAE of 41.4% at a supply voltage of 3.6 V.

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A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI

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Keywords

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