A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT

Cuilin Chen; Fenfen Tuo; Xiao Xu; Toshihiko Yoshimasu

doi:10.1109/RFIT.2016.7578134

A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT

Cuilin Chen, Fenfen Tuo, Xiao Xu, Toshihiko Yoshimasu

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT switch IC employs diode-connected HBTs and LC resonant circuits to improve the insertion loss and isolation. The fabricated SPDT switch IC has exhibited an insertion loss of 3.3 dB, an isolation of 21.8 dB and an input-referred 1-dB compression point (P1dB) of 16 dBm at 32 GHz.

Original language	English
Title of host publication	RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509012350
DOIs	https://doi.org/10.1109/RFIT.2016.7578134
Publication status	Published - 2016 Sept 27
Event	2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan, Province of China Duration: 2016 Aug 24 → 2016 Aug 26

Publication series

Name	RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology

Other

Other	2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016
Country/Territory	Taiwan, Province of China
City	Taipei
Period	16/8/24 → 16/8/26

Keywords

120-nm SiGe HBT
30 GHz
Low-insertion loss
SPDT switch IC

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/RFIT.2016.7578134

Cite this

Chen, C., Tuo, F., Xu, X., & Yoshimasu, T. (2016). A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT. In RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology [7578134] (RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2016.7578134

A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT. / Chen, Cuilin; Tuo, Fenfen; Xu, Xiao et al.
RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology. Institute of Electrical and Electronics Engineers Inc., 2016. 7578134 (RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, C, Tuo, F, Xu, X & Yoshimasu, T 2016, A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT. in RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology., 7578134, RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016, Taipei, Taiwan, Province of China, 16/8/24. https://doi.org/10.1109/RFIT.2016.7578134

Chen C, Tuo F, Xu X, Yoshimasu T. A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT. In RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology. Institute of Electrical and Electronics Engineers Inc. 2016. 7578134. (RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology). doi: 10.1109/RFIT.2016.7578134

Chen, Cuilin ; Tuo, Fenfen ; Xu, Xiao et al. / A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT. RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology. Institute of Electrical and Electronics Engineers Inc., 2016. (RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology).

@inproceedings{29cf288bba8741faad2f308d945a5c54,

title = "A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT",

abstract = "A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT switch IC employs diode-connected HBTs and LC resonant circuits to improve the insertion loss and isolation. The fabricated SPDT switch IC has exhibited an insertion loss of 3.3 dB, an isolation of 21.8 dB and an input-referred 1-dB compression point (P1dB) of 16 dBm at 32 GHz.",

keywords = "120-nm SiGe HBT, 30 GHz, Low-insertion loss, SPDT switch IC",

author = "Cuilin Chen and Fenfen Tuo and Xiao Xu and Toshihiko Yoshimasu",

year = "2016",

month = sep,

day = "27",

doi = "10.1109/RFIT.2016.7578134",

language = "English",

series = "RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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note = "2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 ; Conference date: 24-08-2016 Through 26-08-2016",

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AU - Chen, Cuilin

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AU - Xu, Xiao

AU - Yoshimasu, Toshihiko

PY - 2016/9/27

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N2 - A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT switch IC employs diode-connected HBTs and LC resonant circuits to improve the insertion loss and isolation. The fabricated SPDT switch IC has exhibited an insertion loss of 3.3 dB, an isolation of 21.8 dB and an input-referred 1-dB compression point (P1dB) of 16 dBm at 32 GHz.

AB - A 30-GHz band Single-Pole Double-Throw (SPDT) switch IC is designed, fabricated and fully evaluated in 120-nm SiGe heterojunction bipolar transistor (HBT) process. The SPDT switch IC employs diode-connected HBTs and LC resonant circuits to improve the insertion loss and isolation. The fabricated SPDT switch IC has exhibited an insertion loss of 3.3 dB, an isolation of 21.8 dB and an input-referred 1-dB compression point (P1dB) of 16 dBm at 32 GHz.

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KW - 30 GHz

KW - Low-insertion loss

KW - SPDT switch IC

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M3 - Conference contribution

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BT - RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

A 30-GHz band low-insertion loss and high-isolation SPDT switch IC in 120-nm SiGe HBT

Abstract

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Keywords

ASJC Scopus subject areas

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