A 373 F                         2                          2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique

Kunyang Liu; Yue Min; Xuan Yang; Hanfeng Sun; Hirofumi Shinohara

doi:10.1109/ASSCC.2018.8579315

A 373 F ² 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique

Kunyang Liu, Yue Min, Xuan Yang, Hanfeng Sun, Hirofumi Shinohara

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

This paper presents an Enhancement-Enhancement (EE) SRAM physically unclonable function (PUF) with a dark-bit detection technique based on an integrated Vss-bias generator. The EE SRAM PUF cell improves native stability to 0.21% bit-error rate (BER). Bit cells that are potentially unstable due to environmental variations or aging are detected via the lightweight bias generator to ensure stability, and the effectiveness is verified with experimental results of dark-bit detection performed at room temperature. Measurement results of 10 chips in 130-nm CMOS show that after masking the detected dark bits, 1.3×10 ^-6 BER is achieved across 0.8-1.4 V/-40-120 °C VT corners. The nMOS-only bit cell is also highly compact (i.e., 373 F ² ). Moreover, a 2D power-gating scheme is implemented for low operation energy, low standby power, and high attack tolerance.

Original language	English
Title of host publication	2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	161-164
Number of pages	4
ISBN (Electronic)	9781538664124
DOIs	https://doi.org/10.1109/ASSCC.2018.8579315
Publication status	Published - 2018 Dec 14
Event	2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Tainan, Taiwan, Province of China Duration: 2018 Nov 5 → 2018 Nov 7

Publication series

Name	2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings

Conference

Conference	2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018
Country/Territory	Taiwan, Province of China
City	Tainan
Period	18/11/5 → 18/11/7

Keywords

EE SRAM
IoT
dark-bit masking
hardware security
physically unclonable function (PUF)

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ASSCC.2018.8579315

Cite this

Liu, K., Min, Y., Yang, X., Sun, H., & Shinohara, H. (2018). A 373 F ² 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique In 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings (pp. 161-164). [8579315] (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASSCC.2018.8579315

A 373 F ² 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique . / Liu, Kunyang; Min, Yue; Yang, Xuan et al.
2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 161-164 8579315 (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, K, Min, Y, Yang, X, Sun, H & Shinohara, H 2018, A 373 F ² 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique in 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings., 8579315, 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 161-164, 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018, Tainan, Taiwan, Province of China, 18/11/5. https://doi.org/10.1109/ASSCC.2018.8579315

Liu K, Min Y, Yang X, Sun H, Shinohara H. A 373 F ² 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique In 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 161-164. 8579315. (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings). doi: 10.1109/ASSCC.2018.8579315

Liu, Kunyang ; Min, Yue ; Yang, Xuan et al. / A 373 F ² 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique 2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 161-164 (2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings).

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abstract = " This paper presents an Enhancement-Enhancement (EE) SRAM physically unclonable function (PUF) with a dark-bit detection technique based on an integrated Vss-bias generator. The EE SRAM PUF cell improves native stability to 0.21% bit-error rate (BER). Bit cells that are potentially unstable due to environmental variations or aging are detected via the lightweight bias generator to ensure stability, and the effectiveness is verified with experimental results of dark-bit detection performed at room temperature. Measurement results of 10 chips in 130-nm CMOS show that after masking the detected dark bits, 1.3×10 -6 BER is achieved across 0.8-1.4 V/-40-120 °C VT corners. The nMOS-only bit cell is also highly compact (i.e., 373 F 2 ). Moreover, a 2D power-gating scheme is implemented for low operation energy, low standby power, and high attack tolerance.",

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