A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology

Satoshi Kurachi; Yusuke Murata; Shohei Ishikawa; Nobuyuki Itoh; Koji Yonemura; Toshihiko Yoshimasu

doi:10.1109/BIPOL.2007.4351827

A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology

Satoshi Kurachi^*, Yusuke Murata, Shohei Ishikawa, Nobuyuki Itoh, Koji Yonemura, Toshihiko Yoshimasu

^*Corresponding author for this work

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

This paper presents an ultra-wideband voltage controlled oscillator (VCO) IC using 0.35 μm SiGe BiCMOS technology. The VCO IC exhibits an oscillation frequency from 2.67 to 4.37 GHz. To realize the wideband tuning range, a novel resonant circuit is proposed. The novel resonant circuit consists of three NMOS varactor pairs, p-n diodes, two spiral inductors and a control circuit which sequentially applies a control voltage to the NMOS varactor pairs and p-n diode pairs. The novel resonant circuit allows the VCO IC to have the wideband tuning range with a single analog control voltage. The dc current consumption of the VCO is 5.8 mA at a collector voltage of 4.0 V. The VCO has a phase noise of -111 dBc/Hz at 1 MHz offset at an oscillation frequnecy of 4.37 GHz.

Original language	English
Title of host publication	Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Pages	9-12
Number of pages	4
DOIs	https://doi.org/10.1109/BIPOL.2007.4351827
Publication status	Published - 2007 Dec 1
Event	2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM - Boston, MA, United States Duration: 2007 Sept 30 → 2007 Oct 2

Publication series

Name	Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
ISSN (Print)	1088-9299

Conference

Conference	2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM
Country/Territory	United States
City	Boston, MA
Period	07/9/30 → 07/10/2

Keywords

Resonant circuit
Silicon bipolar/BiCMOS process technology
VCO
Wide tuning range

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/BIPOL.2007.4351827

Cite this

Kurachi, S., Murata, Y., Ishikawa, S., Itoh, N., Yonemura, K., & Yoshimasu, T. (2007). A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology. In Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 9-12). [4351827] (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). https://doi.org/10.1109/BIPOL.2007.4351827

A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology. / Kurachi, Satoshi; Murata, Yusuke; Ishikawa, Shohei et al.
Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2007. p. 9-12 4351827 (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kurachi, S, Murata, Y, Ishikawa, S, Itoh, N, Yonemura, K & Yoshimasu, T 2007, A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology. in Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting., 4351827, Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 9-12, 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM, Boston, MA, United States, 07/9/30. https://doi.org/10.1109/BIPOL.2007.4351827

Kurachi S, Murata Y, Ishikawa S, Itoh N, Yonemura K, Yoshimasu T. A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology. In Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. 2007. p. 9-12. 4351827. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting). doi: 10.1109/BIPOL.2007.4351827

@inproceedings{0305b640062c4bf3a848297014883ec2,

title = "A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology",

abstract = "This paper presents an ultra-wideband voltage controlled oscillator (VCO) IC using 0.35 μm SiGe BiCMOS technology. The VCO IC exhibits an oscillation frequency from 2.67 to 4.37 GHz. To realize the wideband tuning range, a novel resonant circuit is proposed. The novel resonant circuit consists of three NMOS varactor pairs, p-n diodes, two spiral inductors and a control circuit which sequentially applies a control voltage to the NMOS varactor pairs and p-n diode pairs. The novel resonant circuit allows the VCO IC to have the wideband tuning range with a single analog control voltage. The dc current consumption of the VCO is 5.8 mA at a collector voltage of 4.0 V. The VCO has a phase noise of -111 dBc/Hz at 1 MHz offset at an oscillation frequnecy of 4.37 GHz.",

keywords = "Resonant circuit, Silicon bipolar/BiCMOS process technology, VCO, Wide tuning range",

author = "Satoshi Kurachi and Yusuke Murata and Shohei Ishikawa and Nobuyuki Itoh and Koji Yonemura and Toshihiko Yoshimasu",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/BIPOL.2007.4351827",

language = "English",

isbn = "9781424410194",

series = "Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

pages = "9--12",

booktitle = "Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting",

note = "2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM ; Conference date: 30-09-2007 Through 02-10-2007",

}

TY - GEN

T1 - A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology

AU - Kurachi, Satoshi

AU - Murata, Yusuke

AU - Ishikawa, Shohei

AU - Itoh, Nobuyuki

AU - Yonemura, Koji

AU - Yoshimasu, Toshihiko

PY - 2007/12/1

Y1 - 2007/12/1

N2 - This paper presents an ultra-wideband voltage controlled oscillator (VCO) IC using 0.35 μm SiGe BiCMOS technology. The VCO IC exhibits an oscillation frequency from 2.67 to 4.37 GHz. To realize the wideband tuning range, a novel resonant circuit is proposed. The novel resonant circuit consists of three NMOS varactor pairs, p-n diodes, two spiral inductors and a control circuit which sequentially applies a control voltage to the NMOS varactor pairs and p-n diode pairs. The novel resonant circuit allows the VCO IC to have the wideband tuning range with a single analog control voltage. The dc current consumption of the VCO is 5.8 mA at a collector voltage of 4.0 V. The VCO has a phase noise of -111 dBc/Hz at 1 MHz offset at an oscillation frequnecy of 4.37 GHz.

AB - This paper presents an ultra-wideband voltage controlled oscillator (VCO) IC using 0.35 μm SiGe BiCMOS technology. The VCO IC exhibits an oscillation frequency from 2.67 to 4.37 GHz. To realize the wideband tuning range, a novel resonant circuit is proposed. The novel resonant circuit consists of three NMOS varactor pairs, p-n diodes, two spiral inductors and a control circuit which sequentially applies a control voltage to the NMOS varactor pairs and p-n diode pairs. The novel resonant circuit allows the VCO IC to have the wideband tuning range with a single analog control voltage. The dc current consumption of the VCO is 5.8 mA at a collector voltage of 4.0 V. The VCO has a phase noise of -111 dBc/Hz at 1 MHz offset at an oscillation frequnecy of 4.37 GHz.

KW - Resonant circuit

KW - Silicon bipolar/BiCMOS process technology

KW - VCO

KW - Wide tuning range

UR - http://www.scopus.com/inward/record.url?scp=39049126957&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=39049126957&partnerID=8YFLogxK

U2 - 10.1109/BIPOL.2007.4351827

DO - 10.1109/BIPOL.2007.4351827

M3 - Conference contribution

AN - SCOPUS:39049126957

SN - 9781424410194

T3 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

SP - 9

EP - 12

BT - Proceedings of the 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

T2 - 2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM

Y2 - 30 September 2007 through 2 October 2007

ER -

A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this