TY - GEN
T1 - A 44.3% Peak PAE 25-GHz Stacked-FET Linear Power Amplifier IC with A Varactor-Based Novel Adaptive Load Circuit in 45 nm CMOS SOI
AU - Sugiura, Tsuyoshi
AU - Fang, Mengchu
AU - Yoshimasu, Toshihiko
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - This paper presents a 25-GHz-band 4-stacked-FET highly linear high efficiency power amplifier IC in 45-nm CMOS SOI. A novel load circuit which is adaptively controlled by a bias circuit is proposed to achieve high back-off efficiency. A 4-stacked-FET is utilized to increase the output power and to conquer the low breakdown voltage issue of scaled MOSFET. The power amplifier IC is designed, fabricated, and fully evaluated on-wafer. At a supply voltage of 4.5 V, the power amplifier IC has exhibited an output power of 21.1 dBm with a PAE as high as 42.5% at the 1-dB gain compression point (P1dB). In addition, a saturated output power of 22.7 dBm and a peak PAE of 44.3% are obtained. The measured PAEs at 3-dB and 6-dB back-off from P1dB are 35.1% and 21.6%, respectively.
AB - This paper presents a 25-GHz-band 4-stacked-FET highly linear high efficiency power amplifier IC in 45-nm CMOS SOI. A novel load circuit which is adaptively controlled by a bias circuit is proposed to achieve high back-off efficiency. A 4-stacked-FET is utilized to increase the output power and to conquer the low breakdown voltage issue of scaled MOSFET. The power amplifier IC is designed, fabricated, and fully evaluated on-wafer. At a supply voltage of 4.5 V, the power amplifier IC has exhibited an output power of 21.1 dBm with a PAE as high as 42.5% at the 1-dB gain compression point (P1dB). In addition, a saturated output power of 22.7 dBm and a peak PAE of 44.3% are obtained. The measured PAEs at 3-dB and 6-dB back-off from P1dB are 35.1% and 21.6%, respectively.
KW - Adaptive bias
KW - Adaptive load
KW - CMOS SOI
KW - High back-off efficiency
KW - Power amplifier
KW - Stacked-FET
UR - http://www.scopus.com/inward/record.url?scp=85124428699&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85124428699&partnerID=8YFLogxK
U2 - 10.1109/APMC52720.2021.9661854
DO - 10.1109/APMC52720.2021.9661854
M3 - Conference contribution
AN - SCOPUS:85124428699
T3 - Asia-Pacific Microwave Conference Proceedings, APMC
SP - 181
EP - 183
BT - 2021 IEEE Asia-Pacific Microwave Conference, APMC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2021 IEEE Asia-Pacific Microwave Conference, APMC 2021
Y2 - 28 November 2021 through 1 December 2021
ER -