A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching

T. Endoh; S. Togashi; F. Iga; Y. Yoshida; T. Ohsawa; H. Koike; S. Fukami; S. Ikeda; N. Kasai; N. Sakimura; T. Hanyu; H. Ohno

doi:10.1109/IEDM.2011.6131487

A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching

T. Endoh^*, S. Togashi, F. Iga, Y. Yoshida, T. Ohsawa, H. Koike, S. Fukami, S. Ikeda, N. Kasai, N. Sakimura, T. Hanyu, H. Ohno

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

The incubation (transit) time of the perpendicular magnetic tunnel junction (MTJ) is found shorter (longer) than the in-plane MTJ. By making use of the incubation time, a new concept is proposed for MTJ/CMOS hybrid circuits that operate as fast as CMOS circuits without operation power overhead and with negligible MTJ switching error. A nonvolatile latch based on the concept is fabricated in 90nm technology to demonstrate 600MHz stable operation.

Original language	English
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	4.3.1-4.3.4
DOIs	https://doi.org/10.1109/IEDM.2011.6131487
Publication status	Published - 2011 Dec 1
Externally published	Yes
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: 2011 Dec 5 → 2011 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	11/12/5 → 11/12/7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2011.6131487

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Endoh, T., Togashi, S., Iga, F., Yoshida, Y., Ohsawa, T., Koike, H., Fukami, S., Ikeda, S., Kasai, N., Sakimura, N., Hanyu, T., & Ohno, H. (2011). A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 4.3.1-4.3.4). [6131487] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131487

Endoh, T, Togashi, S, Iga, F, Yoshida, Y, Ohsawa, T, Koike, H, Fukami, S, Ikeda, S, Kasai, N, Sakimura, N, Hanyu, T & Ohno, H 2011, A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching. in 2011 International Electron Devices Meeting, IEDM 2011., 6131487, Technical Digest - International Electron Devices Meeting, IEDM, pp. 4.3.1-4.3.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 11/12/5. https://doi.org/10.1109/IEDM.2011.6131487

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abstract = "The incubation (transit) time of the perpendicular magnetic tunnel junction (MTJ) is found shorter (longer) than the in-plane MTJ. By making use of the incubation time, a new concept is proposed for MTJ/CMOS hybrid circuits that operate as fast as CMOS circuits without operation power overhead and with negligible MTJ switching error. A nonvolatile latch based on the concept is fabricated in 90nm technology to demonstrate 600MHz stable operation.",

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AU - Endoh, T.

AU - Togashi, S.

AU - Iga, F.

AU - Yoshida, Y.

AU - Ohsawa, T.

AU - Koike, H.

AU - Fukami, S.

AU - Ikeda, S.

AU - Kasai, N.

AU - Sakimura, N.

AU - Hanyu, T.

AU - Ohno, H.

PY - 2011/12/1

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AB - The incubation (transit) time of the perpendicular magnetic tunnel junction (MTJ) is found shorter (longer) than the in-plane MTJ. By making use of the incubation time, a new concept is proposed for MTJ/CMOS hybrid circuits that operate as fast as CMOS circuits without operation power overhead and with negligible MTJ switching error. A nonvolatile latch based on the concept is fabricated in 90nm technology to demonstrate 600MHz stable operation.

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

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T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011

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ER -

A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching

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