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A 65nm embedded SRAM with wafer-level burn-in mode, leak-bit redundancy and E-trim fuse for known good die
Shigeki Ohbayashi*, Makoto Yabuuchi, Kazushi Kono, Yuji Oda, Susumu Imaoka, Keiichi Usui, Toshiaki Yonezu, Takeshi Iwamoto, Koji Nii, Yasumasa Tsukamoto, Masashi Arakawa, Takahiro Uchida, Masakazu Qkada, Atsushi Ishii, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
4
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(Scopus)