TY - JOUR
T1 - A comparison study
T2 - Direct wafer bonding of SiC-SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam
AU - Mu, Fengwen
AU - Iguchi, Kenichi
AU - Nakazawa, Haruo
AU - Takahashi, Yoshikazu
AU - Fujino, Masahisa
AU - He, Ran
AU - Suga, Tadatomo
PY - 2016/8/1
Y1 - 2016/8/1
N2 - In this study, the results of direct wafer bonding of SiC-SiC at room temperature by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared, in terms of bonding energy, interface structure and composition, and the effects of rapid thermal annealing (RTA) at 1273K in Ar gas. Compared with that obtained by the standard SAB, the bonding interface obtained by the modified SAB with a Si-containing Ar ion beam is >30% stronger and almost completely recrystallized without oxidation during RTA, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.
AB - In this study, the results of direct wafer bonding of SiC-SiC at room temperature by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared, in terms of bonding energy, interface structure and composition, and the effects of rapid thermal annealing (RTA) at 1273K in Ar gas. Compared with that obtained by the standard SAB, the bonding interface obtained by the modified SAB with a Si-containing Ar ion beam is >30% stronger and almost completely recrystallized without oxidation during RTA, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.
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U2 - 10.7567/APEX.9.081302
DO - 10.7567/APEX.9.081302
M3 - Article
AN - SCOPUS:84981350508
SN - 1882-0778
VL - 9
JO - Applied Physics Express
JF - Applied Physics Express
IS - 8
M1 - 081302
ER -