A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM

Yoshihiro Minami; Tomoaki Shino; Atsushi Sakamoto; Tomoki Higashi; Naoki Kusunoki; Katsuyuki Fujita; Kosuke Hatsuda; Takashi Ohsawa; Nobutoshi Aoki; Hiroyoshi Tanimoto; Mutsuo Morikado; Hiroomi Nakajima; Kazumi Inoh; Takeshi Hamamoto; Akihiro Nitayama

A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM

Yoshihiro Minami^*, Tomoaki Shino, Atsushi Sakamoto, Tomoki Higashi, Naoki Kusunoki, Katsuyuki Fujita, Kosuke Hatsuda, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

A 128Mb SOI DRAM with FBC (Floating Body Cell) has been successfully developed for the first time. Two technologies have been newly implemented. (i)In order to realize full functionality and good retention characteristics, the well design has been optimized both for the array device and the peripheral circuit. (ii)Cu wiring has been used for Bit Line(BL) and Source Line(SL), which leads to increasing the signal of the worst bit in the array and also realizes the full compatibility with 90nm CMOS Technology.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	307-310
Number of pages	4
Publication status	Published - 2005 Dec 1
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 2005 Dec 5 → 2005 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005
ISSN (Print)	0163-1918

Other

Other	IEEE International Electron Devices Meeting, 2005 IEDM
Country/Territory	United States
City	Washington, DC, MD
Period	05/12/5 → 05/12/7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Minami, Y., Shino, T., Sakamoto, A., Higashi, T., Kusunoki, N., Fujita, K., Hatsuda, K., Ohsawa, T., Aoki, N., Tanimoto, H., Morikado, M., Nakajima, H., Inoh, K., Hamamoto, T., & Nitayama, A. (2005). A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 307-310). Article 1609336 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM. / Minami, Yoshihiro; Shino, Tomoaki; Sakamoto, Atsushi et al.
IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 307-310 1609336 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Minami, Y, Shino, T, Sakamoto, A, Higashi, T, Kusunoki, N, Fujita, K, Hatsuda, K, Ohsawa, T, Aoki, N, Tanimoto, H, Morikado, M, Nakajima, H, Inoh, K, Hamamoto, T & Nitayama, A 2005, A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609336, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 307-310, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 05/12/5.

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abstract = "A 128Mb SOI DRAM with FBC (Floating Body Cell) has been successfully developed for the first time. Two technologies have been newly implemented. (i)In order to realize full functionality and good retention characteristics, the well design has been optimized both for the array device and the peripheral circuit. (ii)Cu wiring has been used for Bit Line(BL) and Source Line(SL), which leads to increasing the signal of the worst bit in the array and also realizes the full compatibility with 90nm CMOS Technology.",

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AU - Kusunoki, Naoki

AU - Fujita, Katsuyuki

AU - Hatsuda, Kosuke

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A Floating Body Cell (FBC) fully compatible with 90nm CMOS technology(CMOS IV) for 128Mb SOI DRAM

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