A gate-current model for advanced MOSFET technologies implemented into HiSIM2

Ryosuke Inagaki*, Norio Sadachika, Dondee Navarro, Mitiko Miura-Mattausch, Yasuaki Inoue

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)


    A gate leakage current model for advanced MOSFETs has been developed and implemented into the Hiroshima-university STARC IGFET Model (HiSIM), the first complete surface-potential-based model. The model consists of four tunneling mechanisms, the gate to channel/bulk/source/drain, and requires totally 15 model parameters covering all bias conditions. Simulation results reproduce measurement for any device size and temperature without binning. Validity of the model has been tested with circuits that are sensitive to the change of stored charge due to tunneling current.

    Original languageEnglish
    Pages (from-to)64-71
    Number of pages8
    JournalIEEJ Transactions on Electrical and Electronic Engineering
    Issue number1
    Publication statusPublished - 2008 Jan


    • Gate current
    • Hisim
    • Leakage current
    • Surface potential
    • Tunneling current
    • Without binning

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering


    Dive into the research topics of 'A gate-current model for advanced MOSFET technologies implemented into HiSIM2'. Together they form a unique fingerprint.

    Cite this