Abstract
A GIDL (Gate Induced Drain Leakage) current model for advanced MOSFETs has been proposed and implemented into HiSIM2, first complete surface potential based model. The model consists of one tunneling mechanism considering two tunneling currents, band to band tunneling (BTBT) and trap assisted tunneling (TAT), and requires totally 7 model parameters covering all bias conditions. Simulation results of NFETs and PFETs reproduce measurements for any device size without binning. Validity of the model has been tested with a circuit, which is sensitive to the change of the stored charge due to tunneling current.
| Original language | English |
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| Title of host publication | ICCCAS 2007 - International Conference on Communications, Circuits and Systems 2007 |
| Pages | 1057-1061 |
| Number of pages | 5 |
| Publication status | Published - 2008 |
| Event | ICCCAS 2007 - International Conference on Communications, Circuits and Systems 2007 - Kokura Duration: 2007 Jul 11 → 2007 Jul 13 |
Other
| Other | ICCCAS 2007 - International Conference on Communications, Circuits and Systems 2007 |
|---|---|
| City | Kokura |
| Period | 07/7/11 → 07/7/13 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering