A globally convergent nonlinear homotopy method for MOS transistor circuits

Dan Niu*, Kazutoshi Sako, Guangming Hu, Yasuaki Inoue

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)


    Finding DC operating points of nonlinear circuits is an important and difficult task. The Newton-Raphson method adopted in the SPICE-like simulators often fails to converge to a solution. To overcome this convergence problem, homotopy methods have been studied from various viewpoints. However, most previous studies are mainly focused on the bipolar transistor circuits and no paper presents the global convergence theorems of homotopy methods for MOS transistor circuits. Moreover, due to the improvements and advantages of MOS transistor technologies, extending the homotopy methods to MOS transistor circuits becomes more and more necessary and important. This paper proposes two nonlinear homotopy methods for MOS transistor circuits and proves the global convergence theorems for the proposed MOS nonlinear homotopy method II. Numerical examples show that both of the two proposed homotopy methods for MOS transistor circuits are more effective for finding DC operating points than the conventional MOS homotopy method and they are also capable of finding DC operating points for large-scale circuits.

    Original languageEnglish
    Pages (from-to)2251-2260
    Number of pages10
    JournalIEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
    Issue number12
    Publication statusPublished - 2012 Dec


    • Circuit simulation
    • DC operating point
    • Homotopy method
    • Nonlinear circuit
    • Passivity

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Graphics and Computer-Aided Design
    • Applied Mathematics
    • Signal Processing


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