A highly reliable gate/n- overlapped transistor for mega-bit DRAMs

M. Nagatomo; Y. Okumura; K. Mitsui; I. Ogoh; H. Genjoh; M. Inuishi; T. Matsukawa

doi:10.1007/978-3-642-52314-4_192

A highly reliable gate/n^- overlapped transistor for mega-bit DRAMs

M. Nagatomo^*, Y. Okumura, K. Mitsui, I. Ogoh, H. Genjoh, M. Inuishi, T. Matsukawa

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A noble gate/N^- overlapped Tr. fabricated using oblique rotating ion implantation technique was developed. It is confirmed that this Tr. meets high performance M bit DRAMs' requirements, that is, high drain current, enough punchthrough voltage and low substrate current. The mechanism of this Tr.'s action is analyzed by simulation and is concluded that peak position of electric field is located far from the drain current pass in this Tr.'s structure. The maximum electric field is also relaxed by formation of N^- layer using oblique ion implantation.

Original language	English
Title of host publication	ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
Editors	Anton Heuberger, Heiner Ryssel, Peter Lange
Publisher	IEEE Computer Society
Pages	923-926
Number of pages	4
ISBN (Electronic)	0387510001
ISBN (Print)	9780387510002
DOIs	https://doi.org/10.1007/978-3-642-52314-4_192
Publication status	Published - 1989 Jan 1
Externally published	Yes
Event	19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany Duration: 1989 Sept 11 → 1989 Sept 14

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	19th European Solid State Device Research Conference, ESSDERC 1989
Country/Territory	Germany
City	Berlin
Period	89/9/11 → 89/9/14

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1007/978-3-642-52314-4_192

Cite this

Nagatomo, M., Okumura, Y., Mitsui, K., Ogoh, I., Genjoh, H., Inuishi, M., & Matsukawa, T. (1989). A highly reliable gate/n^- overlapped transistor for mega-bit DRAMs. In A. Heuberger, H. Ryssel, & P. Lange (Eds.), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 923-926). Article 5437066 (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1007/978-3-642-52314-4_192

A highly reliable gate/n^- overlapped transistor for mega-bit DRAMs. / Nagatomo, M.; Okumura, Y.; Mitsui, K. et al.
ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. ed. / Anton Heuberger; Heiner Ryssel; Peter Lange. IEEE Computer Society, 1989. p. 923-926 5437066 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nagatomo, M, Okumura, Y, Mitsui, K, Ogoh, I, Genjoh, H, Inuishi, M & Matsukawa, T 1989, A highly reliable gate/n^- overlapped transistor for mega-bit DRAMs. in A Heuberger, H Ryssel & P Lange (eds), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference., 5437066, European Solid-State Device Research Conference, IEEE Computer Society, pp. 923-926, 19th European Solid State Device Research Conference, ESSDERC 1989, Berlin, Germany, 89/9/11. https://doi.org/10.1007/978-3-642-52314-4_192

Nagatomo M, Okumura Y, Mitsui K, Ogoh I, Genjoh H, Inuishi M et al. A highly reliable gate/n^- overlapped transistor for mega-bit DRAMs. In Heuberger A, Ryssel H, Lange P, editors, ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference. IEEE Computer Society. 1989. p. 923-926. 5437066. (European Solid-State Device Research Conference). doi: 10.1007/978-3-642-52314-4_192

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