Abstract
A formulated kinetic theory for thermal oxidation of silicon is presented in detail. The theory does not involve the rate-limiting step of the interfacial oxidation reaction, instead it is supposed that the diffusivity is suppressed in a strained oxide region near the Si O2 Si interface. The expression of the parabolic constant is the same as that of the Deal-Grove model, while the linear constant makes a clear distinction with the model. The estimated thickness using the expression is close to 1 nm, which compares well with the thickness of the structural transition layer. The origin of the deviation from the linear-parabolic relationship observed at initial oxidation stages can be explained by the enhanced diffusion hypothesis, which is the opposite conclusion to the Deal-Grove theory.
| Original language | English |
|---|---|
| Pages (from-to) | G270-G276 |
| Journal | Journal of the Electrochemical Society |
| Volume | 154 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2007 Nov 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
