A loadless 4T SRAM powered by gate leakage current with a high tolerance for fluctuations in device parameters

Yihan Zhu, Takashi Ohsawa

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Fingerprint

Dive into the research topics of 'A loadless 4T SRAM powered by gate leakage current with a high tolerance for fluctuations in device parameters'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy