A Low Phase Noise MMIC VCO in InGaP/GaAs HBT

Satoshi Kurachi; Haiwen Liu; Jia Chen; Toshihiko Yoshimasu

A Low Phase Noise MMIC VCO in InGaP/GaAs HBT

Satoshi Kurachi^*, Haiwen Liu, Jia Chen, Toshihiko Yoshimasu

^*Corresponding author for this work

Graduate School of Information, Production and Systems

Research output: Contribution to journal › Article › peer-review

Abstract

A fully integrated low phase noise voltage controlled oscillator (VCO) MMIC for millimeterwave applications was developed. The MMIC was implemented in an InGAP/GaAs heterojunction bipolar transistor (HBT) technology. This fully integrated VCO MMIC was successfully created by using a base-emitter junction varactor and microstrip lines. The VCO MMIC delivers an output power of 4.9 dBm at 31.6 GHz. Its measured phase noise at 1-MHz offset from the carrier is -121.6 dBc/Hz at an oscillation frequency of 31.6 GHz. It also provides a tuning range of 700 MHz with little variation in output power.

Original language	English
Pages (from-to)	422-428
Number of pages	7
Journal	International Journal of Microwave and Optical Technology
Volume	1
Issue number	2-I
Publication status	Published - 2006 Aug

Keywords

InGaP/GaAs HBT
low phase noise
millimeterwave
VCO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "A Low Phase Noise MMIC VCO in InGaP/GaAs HBT",

abstract = "A fully integrated low phase noise voltage controlled oscillator (VCO) MMIC for millimeterwave applications was developed. The MMIC was implemented in an InGAP/GaAs heterojunction bipolar transistor (HBT) technology. This fully integrated VCO MMIC was successfully created by using a base-emitter junction varactor and microstrip lines. The VCO MMIC delivers an output power of 4.9 dBm at 31.6 GHz. Its measured phase noise at 1-MHz offset from the carrier is -121.6 dBc/Hz at an oscillation frequency of 31.6 GHz. It also provides a tuning range of 700 MHz with little variation in output power.",

keywords = "InGaP/GaAs HBT, low phase noise, millimeterwave, VCO",

author = "Satoshi Kurachi and Haiwen Liu and Jia Chen and Toshihiko Yoshimasu",

note = "Funding Information: The authors wish to thank K.Sakuno, E.Suematsu, and A.Yamada for their insightful contributions. They also wish to thank the wafer process group of the Device Technology Research Laboratories, Sharp Corporation. Publisher Copyright: {\textcopyright} 2006 ISRAMT. All Rights Reserved.",

year = "2006",

month = aug,

language = "English",

volume = "1",

pages = "422--428",

journal = "International Journal of Microwave and Optical Technology",

issn = "1553-0396",

publisher = "Electrical Engineering Department,University of Nevada",

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T1 - A Low Phase Noise MMIC VCO in InGaP/GaAs HBT

AU - Kurachi, Satoshi

AU - Liu, Haiwen

AU - Chen, Jia

AU - Yoshimasu, Toshihiko

N1 - Funding Information: The authors wish to thank K.Sakuno, E.Suematsu, and A.Yamada for their insightful contributions. They also wish to thank the wafer process group of the Device Technology Research Laboratories, Sharp Corporation. Publisher Copyright: © 2006 ISRAMT. All Rights Reserved.

PY - 2006/8

Y1 - 2006/8

N2 - A fully integrated low phase noise voltage controlled oscillator (VCO) MMIC for millimeterwave applications was developed. The MMIC was implemented in an InGAP/GaAs heterojunction bipolar transistor (HBT) technology. This fully integrated VCO MMIC was successfully created by using a base-emitter junction varactor and microstrip lines. The VCO MMIC delivers an output power of 4.9 dBm at 31.6 GHz. Its measured phase noise at 1-MHz offset from the carrier is -121.6 dBc/Hz at an oscillation frequency of 31.6 GHz. It also provides a tuning range of 700 MHz with little variation in output power.

AB - A fully integrated low phase noise voltage controlled oscillator (VCO) MMIC for millimeterwave applications was developed. The MMIC was implemented in an InGAP/GaAs heterojunction bipolar transistor (HBT) technology. This fully integrated VCO MMIC was successfully created by using a base-emitter junction varactor and microstrip lines. The VCO MMIC delivers an output power of 4.9 dBm at 31.6 GHz. Its measured phase noise at 1-MHz offset from the carrier is -121.6 dBc/Hz at an oscillation frequency of 31.6 GHz. It also provides a tuning range of 700 MHz with little variation in output power.

KW - InGaP/GaAs HBT

KW - low phase noise

KW - millimeterwave

KW - VCO

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SN - 1553-0396

VL - 1

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JO - International Journal of Microwave and Optical Technology

JF - International Journal of Microwave and Optical Technology

IS - 2-I

ER -

A Low Phase Noise MMIC VCO in InGaP/GaAs HBT

Abstract

Keywords

ASJC Scopus subject areas

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