A Low Phase Noise MMIC VCO in InGaP/GaAs HBT

Satoshi Kurachi*, Haiwen Liu, Jia Chen, Toshihiko Yoshimasu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


A fully integrated low phase noise voltage controlled oscillator (VCO) MMIC for millimeterwave applications was developed. The MMIC was implemented in an InGAP/GaAs heterojunction bipolar transistor (HBT) technology. This fully integrated VCO MMIC was successfully created by using a base-emitter junction varactor and microstrip lines. The VCO MMIC delivers an output power of 4.9 dBm at 31.6 GHz. Its measured phase noise at 1-MHz offset from the carrier is -121.6 dBc/Hz at an oscillation frequency of 31.6 GHz. It also provides a tuning range of 700 MHz with little variation in output power.

Original languageEnglish
Pages (from-to)422-428
Number of pages7
JournalInternational Journal of Microwave and Optical Technology
Issue number2-I
Publication statusPublished - 2006 Aug


  • InGaP/GaAs HBT
  • low phase noise
  • millimeterwave
  • VCO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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