A low-power sub-1-V low-voltage reference using body effect

Jun Pan*, Yasuaki Inoue, Zheng Liang, Zhangcai Huang, Weilun Huang

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)


    A low-power sub-1-V self-biased low-voltage reference is proposed for micropower electronic applications based on body effect. The proposed reference has a very low temperature dependence by using a MOSFET with body effect compared with other reported low-power references. An HSPICE simulation shows that the reference voltage and the total power dissipation are 181 mV and 1.1 μW, respectively. The temperature coefficient of the reference voltage is 33 ppm/°C at temperatures from -40 to 100°C. The supply voltage can be as low as 0.95 V in a standard CMOS 0.35 μm technology with threshold voltages of about 0.5 V and -0.65 V for n-channel and p-channel MOSFETs, respectively. Furthermore, the supply voltage dependence is -0.36 mV/V (Vdd = 0.95-3.3 V).

    Original languageEnglish
    Pages (from-to)748-755
    Number of pages8
    JournalIEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
    Issue number4
    Publication statusPublished - 2007 Apr


    • Back-gate
    • Body effect
    • CMOS
    • Low-power
    • Low-voltage
    • Reference
    • Temperature coefficient

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Hardware and Architecture
    • Information Systems


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